Fabrication of Multilayered SiOCH Films with Low Dielectric Constant Employing Layer-by-Layer Process of Plasma Enhanced Chemical Vapor Deposition and Oxidation
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概要
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A multilayered SiOCH film was proposed as an interlayer insulating film with low dielectric constant (low $k$) for multilevel interconnection of next-generation ultralarge scale integrated circuits (ULSIs). Multilayered films were fabricated employing a layer-by-layer process of plasma-enhanced chemical vapor deposition (PECVD) using a hexamethyldisiloxane (HMDSO) monomer source and O2 plasma oxidation. The methyl-siloxane film consisting of siloxane (Si–O–Si) and Si–methyl (Si–CH3) bonds, was formed using PECVD with HMDSO and O2. In order to improve the dielectric properties of the film, the surface of the methyl-siloxane film was transformed into the low-density SiOCH layer through plasma oxidation. The multilayered structure composed of alternating methyl-siloxane and low-density SiOCH layers was fabricated. As a result of optimization of layer-by-layer process conditions, the multilayered thin film with low dielectric constant of 2.4 was successfully obtained.
- 2003-05-15
著者
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Hiramatsu Mineo
Department Of Electrical And Electronic Engineering Meijo University
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Fujii Toshiaki
Department Of Computer Science Graduate School Of Engineering Nagoya University
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Hori Masaru
Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ
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Nagai Hisao
Department Of Chemistry College Of Humanities And Sciences Nihon University
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GOTO Toshio
Department of Agricultural Chemistry, Faculty of Agriculture, Nagoya University
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Nagai Hisao
Department of Quantum Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
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Hiramatsu Mineo
Department of Electrical and Electronic Engineering, Meijo University, Tempaku-ku, Nagoya 468-8502, Japan
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Goto Toshio
Department of Quantum Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
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Hori Masaru
Department of Quantum Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
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