Evaluation of Property Changes due to Radiation, Radicals, and Ions on Organic Low-$k$ Films in H2/N2 Plasma Etching
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概要
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An organic low-dielectric constant (low-$k$) film, polyallylene (PAr), is a prospective candidate for low-$k$ interlayer films for ultra large-scale integrated circuits (ULSIs). PAr films are caused the property changes such as increases of the dielectric constant during plasma etching and ashing. In a previous study, we have developed a novel technique called pallet for plasma evaluation (PAPE) for separately evaluating the property changes caused by radiation, radicals, and ions in process plasmas and clarified the mechanism of plasma-induced property changes on low-$k$ porous SiOCH films. In this study, using the PAPE technique, we investigated the changes on the surface of a PAr film due to radiation, radicals, radiation with radicals, and ions in dual-frequency capacitively coupled H2/N2 plasmas. The property changes were characterized by ellipsometry and X-ray photoelectron spectroscopy. The property changes on the PAr films due to radiation and radicals were considerably smaller compared to those on the low-$k$ porous SiOCH films.
- 2008-05-25
著者
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Hori Masaru
Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ
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Fukasawa Masanaga
Process Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Fukasawa Masanaga
Process Design Department, Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Ohshima Keiji
Process Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Tatsumi Tetsuya
Process Design Department, Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Nagahata Kazunori
Process Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Takashima Seigo
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Uchida Saburo
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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