High-Rate Growth of Films of Dense, Aligned Double-Walled Carbon Nanotubes Using Microwave Plasma-Enhanced Chemical Vapor Deposition

スポンサーリンク

概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2005-06-10

著者

• Hori Masaru

  Department Of Quantum Engineering Nagoya University

• Hori Masaru

  Department Of Electrical Engineering And Computer Science Nagoya University

• HIRAMATSU Mineo

  Nano Factory, Department of Electrical and Electronic Engineering, Meijo University

• Hiramatsu Mineo

  Nano Factory Department Of Electrical And Electronic Engineering Meijo University

• NAGAO Hidetoshi

  Nano Factory, Department of Materials Science and Engineering, Meijo University

• TANIGUCHI Masaki

  Nano Factory, Department of Materials Science and Engineering, Meijo University

• AMANO Hiroshi

  Nano Factory, Department of Materials Science and Engineering, Meijo University

• ANDO Yoshinori

  Nano Factory, Department of Materials Science and Engineering, Meijo University

• Taniguchi Masateru

  The Institute Of Scientific And Industrial Research Osaka University

• Taniguchi Masaki

  Nanofactory Department Of Materials Science And Engineering Meijo University

関連論文

• Growth and Energy Bandgap Formation of Silicon Nitride Films in Radical Nitridation
• Fabrication of Carbon Nanowalls Using Novel Plasma Processing
• Infrared spectroscopy on poly(dG)-poly(dC) DNA at low hydration
• Growth of Carbon Nanotubes by Microwave-excited Non-Equilibrium Atmospheric-Pressure Plasma
• Diamond Film Formation by OH Radical Injection from Remote Microwave H_2/H_2O Plasma into Parallel-Plate RF Methanol Plasma
• High-Rate Anisotropic Ablation and Deposition of Polytetrafluoroethylene Using Synchrotron Radiation Process
• Synthesis of Diamond Using RF Magnetron Methanol Plasma Chemical Vapor Deposition Assisted by Hydrogen Radical Injection
• High-Rate Growth of Films of Dense, Aligned Double-Walled Carbon Nanotubes Using Microwave Plasma-Enhanced Chemical Vapor Deposition
• Fabrication of Dense Carbon Nanotube Films Using Microwave Plasma-Enhanced Chemical Vapor Deposition
• Study on the Absolute Density and Translational Temperature of Si Atoms in Very High Frequency Capacitively Coupled SiH_4 Plasma with Ar, N_2, and H_2 Dilution Gases
• A Novel Silicon-Dioxide Etching Process Employing Pulse-Modulated Electron-Beam-Excited Plasma
• Effects of Ar Dilution and Exciting Frequency on Absolute Density and Translational Temperature of Si Atom in Very High Frequency-Capacitively Coupled SiH_4 Plasmas
• Effects of Driving Frequency on the Translational Temperature and Absolute Density of Si Atoms in Very High Frequency Capacitively Coupled SiF_4 Plasmas
• Development of Compact C_2F_4 Gas Supply Equipment and Its Application to Etching of Dielectrics in an Environmental Benign Process
• Low-k SiOCH Film Etching Process and Its Diagnostics Employing Ar/C_5F_O/N_2 Plasma
• Octave Spanning High Quality Super Continuum Generation Using 10nJ and 104fs High Energy Ultrashort Soliton Pulse
• Combinatorial Plasma Etching Process
• Synthesis of Platinum Nanoparticles on Two-Dimensional Carbon Nanostructures with an Ultrahigh Aspect Ratio Employing Supercritical Fluid Chemical Vapor Deposition Process
• Control of Electric Conduction of Carbon Nanowalls
• Electrical Characterization of Carbon Nanowalls
• Selective Adsorption of DNA onto SiO_2 Surface in SiO_2/SiH Pattern
• Electrical Properties of Poly(dA)・Poly(dT) and Poly(dG)・Poly(dC) DNA
• Humidity Dependence of Electrical Resistivity in Poly(dG)・Poly(dC) DNA Thin Film
• Hydration Effects on the Microwave Dielectricity in Dry Poly(dA)-Poly(dT) DNA(Cross-disciplinary physics and related areas of science and technology)
• Measurement Environment Dependency of Single Molecule Conductance
• High Performance of Silicon Oxide Selective Etching Using F_2 Gas and Graphite Instead of Perfluorinated Compound Gases
• Diamond Deposition and Behavior of Atomic Carbon Species in a Low-Pressure Inductively Coupled Plasma
• Behaviors of carbon atom density in hydrocarbon and fluorocarbon plasmas
• Measurement of Einstein's A Coefficient of the 296.7 nm Transition Line of the Carbon Atom
• Measurement of Carbon Atom Density in High Density Plasma Process
• Fabrication of Multilayered SiOCH Films with Low Dielectric Constant Employing Layer-by-Layer Process of Plasma Enhanced Chemical Vapor Deposition and Oxidation
• Effects of Oxygen and Nitrogen Atoms on SiOCH Film Etching in Ultrahigh-Frequency Plasma
• Plasma Induced Subsurface Reactions for Anisotropic Etching of Organic Low Dielectric Film Employing N_2 and H_2 Gas Chemistry
• Synthesis of Polytetrafluoroethylene-like Films by a Novel Plasma Enhanced Chemical Vapor Deposition Employing Solid Material Evaporation Technique
• CH_3 Radical Density in Electron Cyclotron Resonance CH_3OH and CH_3OH/H_2 Plasmas
• Evaluation of CF_2 Radical as a Precursor for Fluorocarbon Film Formation in Highly Selective SiO_2 Etching Process Using Radical Injection Technique
• CF_X (X=1-3) Radical Measurements in ECR Etching Plasma Employing C_4F_8 Gas by Infrared Diode Laser Absorption Spectroscopy
• Characteristics of Fluorocarbon Radicals and CHF_3 Molecule in CHF_3 Electron Cyclotron Resonance Downstream Plasma
• CF_X(X=1-3) Radicals Controlled by On-Off Modulated Electron Cyclotron Resonance Plasma and Their Effects on Polymer Film Deposition ( Plasma Processing)
• Cleaning of Glass Disk in Oxygen Plasma by Using Compact Electron-Beam-Excited Plasma Source
• Silicon Oxide Selective Etching Employing Dual Frequency Superimposed Magnetron Sputtering of Carbon Using F_2/Ar Gases
• Atmospheric Pressure Fluorocarbon-Particle Plasma Chemical Vapor Deposition for Hydrophobic Film Coating
• Measurement of Spatial Distribution of SiF_4 and SiF_2 Densities in High Density SiF_4 Plasma Using Single-Path Infrared Diode Laser Absorption Spectroscopy and Laser-Induced Fluorescence Technique
• Spatial Distribution Measurement of Absolute Densities of CF and CF_2 Radicals in a High Density Plasma Reactor Using a Combination of Single-Path Infrared Diode Laser Absorption Spectroscopy and Laser-Induced Fluorescence Technique
• Critical Factors for Nucleation and Vertical Growth of Two Dimensional Nano-Graphene Sheets Employing a Novel Ar^+ Beam with Hydrogen and Fluorocarbon Radical Injection
• Development and Characterization of a New Compact Microwave Radical Beam Source
• Roles of SiH_3 and SiH_2 Radicals in Particle Growth in rf Silane Plasmas
• Effects of Dilution Gases on Si Atoms and SiHx^^+ (X = 0-3) Ions in Electron Cyclotron Resonance SiH_4 Plasmas
• Measurements of the CF, CF_2 and CF_3 Radicals in a CHF_3 Electron Cyclotron Resonance Plasma
• Deposition of Diamond-Like Carbon Using Compact Electron-Beam-Excited Plasma Source
• Investigation of Nitrogen Atoms in Low-Pressure Nitrogen Plasmas Using a Compact Electron-Beam-Excited Plasma Source
• Control of Fluorocarbon Radicals by On-Off Modulated Electron Cyclotron Resonance Plasma
• Selective Adsorption of DNA onto SiO2 Surface in SiO2/SiH Pattern
• Aligned Growth of Single-Walled and Double-Walled Carbon Nanotube Films by Control of Catalyst Preparation
• High-Rate Growth of Films of Dense, Aligned Double-Walled Carbon Nanotubes Using Microwave Plasma-Enhanced Chemical Vapor Deposition
• Fabrication of Dense Carbon Nanotube Films Using Microwave Plasma-Enhanced Chemical Vapor Deposition
• Growth of Carbon Nanotubes by Microwave-excited Non-Equilibrium Atmospheric-Pressure Plasma
• Fabrication of Carbon Nanowalls Using Novel Plasma Processing

もっと見る 閉じる

スポンサーリンク