In-situ Time-Resolved Infrared Spectroscopic Study of Silicon-Oxide Surface during Selective Etching over Silicon in Fluorocarbon Plasma
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概要
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We investigated how fluorocarbon(CF)film formation evolves from the beginning of the etching process and how it reaches a steady state at a specific thickness. Using in-situ time-resolved infrared spectroscopy with attenuated total reflection method, we measured the spectra every 2s and observed CF film formation during plasma etching of silicon oxide. The observed spectra overlapped : a band at around 1200-1400cm^<-1> caused by CF bonds overlapped with a trough at below 1300cm^<-1> caused by silicon oxygen bonds. By deconvolving each component of the spectra in the series, we obtained the time-resolved intensity profiles. We found that the CF film was deposited and that its thickness reached a steady state during etching. The time evolution was fitted by a model based on the balance of rates between deposition and sputtering of the CF film.
- 社団法人応用物理学会の論文
- 2000-12-30
著者
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Sekine Makoto
Plasma Technology Laboratory Association Of Super-advanced Electronics Technologies(aset)
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ISHIKAWA Kenji
Plasma Technology Laboratory, Association of Super-advanced Electronics Technologies(ASET)
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Ishikawa Kenji
Plasma Technology Laboratory Association Of Super-advanced Electronics Technologies(aset)
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Sekine Makoto
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Ishikawa Kenji
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Ishikawa Kenji
Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Sekine Makoto
Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan
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