Quantum Chemical Investigation of Si Chemical Dry Etching by Flowing NF into N Downflow Plasma

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概要

• 論文の詳細を見る

著者

• Kono Akihiro

  Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan

• Hayashi Toshio

  Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan

• Suu Koukou

  Institute for Semiconductor and Electronics Technologies, ULVAC Inc., Susono, Shizuoka 410-1231, Japan

• Ishikawa Kenji

  Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan

• Hori Masaru

  Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan

• Sekine Makoto

  Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan

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• Dry Etching Process for Pb(Zr,Ti)O3 Thin-Film Actuators
• Quantum Chemical Investigation of Si Chemical Dry Etching by Flowing NF into N Downflow Plasma
• Quantum Chemical Investigation for Chemical Dry Etching of SiO by Flowing NF into H Downflow Plasma
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