Characterization of Thin-Film Decoupling and High-Frequency (Ba,Sr)TiO3 Capacitors on Al2O3 Ceramic Substrates

概要

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In this paper we present the results of the characterization of parallel-plate thin-film (Ba1-x,Srx)TiO3 (BST) capacitors, to demonstrate their suitability for use as decoupling capacitors (a capacitance as high as 0.34 μF and a capacitance density of up to 70 fF/μm2) and as tunable RF components (a small capacitance from 0.5 pF to 16 pF, a high tunability of 4.22:1 at 10 V and a capacitance density of up to 34 fF/μm2). BST films of different compositions, (Ba0.7Sr0.3)TiO3 and (Ba0.5Sr0.5)TiO3, were grown by metal-organic decomposition (MOD) and RF magnetron reactive sputtering on Pt/TiOx/SiO2/Al2O3 ceramic substrates. For large capacitors (2.25 mm2), capacitance and $\tan\delta$ were measured at low frequencies (1 kHz) using an LCR meter. Smaller capacitors (16 μm2 to 961 μm2) were characterized in the frequency range of 0.01–20 GHz. Capacitance, $\tan\delta$ and equivalent series resistance (ESR) were extracted from two port scattering parameters obtained using a vector network analyzer (VNA). The relationships between dielectric loss, tunability and commutation quality factor (CQF) vs BST composition and deposition conditions were outlined.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2004-09-15