Reactive Ion Etching Process of Transition-Metal Oxide for Resistance Random Access Memory Device
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概要
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The reactive ion etching (RIE) of the binary transition-metal oxides (TMOs) NiO, CuO and CoO, which are expected to be key materials of resistance random access memory (RRAMTM), was investigated. We found that inductively coupled plasma using CHF3-based discharge, which is highly compatible with conventional semiconductor RIE, is effective for the TMOs studied here. Furthermore, device fabrication using Pt/CoO/Pt trilayers is carried out, and a large change in resistance, which is an essential functionality of RRAM, was successfully observed. This should be definite evidence of a successful RIE realized in the present device fabrication.
- 2008-08-25
著者
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Arboleda Nelson
Graduate School Of Engineering Osaka University
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Akinaga Hiro
Nanotechnology Research Institute (nri) National Institute Of Advanced Industrial Science And Techno
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ROMAN Tanglaw
Graduate School of Engineering, Osaka University
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SHIMA Hisashi
Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Techn
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David Melanie
Graduate School Of Engineering Osaka University
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Suu Koukou
Institute For Semiconductor Technologies Ulvac Inc.
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Kishi Hirofumi
Graduate School Of Engineering Osaka University
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Nishioka Yutaka
Institute For Semiconductor Technologies Ulvac Inc.
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Kasai Hideaki
Graduate School Of Engineering Osaka University
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Takano Fumiyoshi
Nanotechnology Research Institute (nri) National Institute Of Advanced Industrial Science And Techno
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Nishioka Yutaka
Institute for Semiconductor Technologies, ULVAC Inc., Susono, Shizuoka 410-1231, Japan
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Arboleda Nelson
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Muramatsu Hidenobu
Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Kokaze Yutaka
Institute for Semiconductor Technologies, ULVAC Inc., Susono, Shizuoka 410-1231, Japan
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Kishi Hirofumi
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Suu Koukou
Institute for Semiconductor and Electronics Technologies, ULVAC Inc., Susono, Shizuoka 410-1231, Japan
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Kasai Hideaki
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Roman Tanglaw
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Shima Hisashi
Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Takano Fumiyoshi
Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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