Performance of Integrated Cu Gap-Filling Process with Chemical Vapor Deposition Cobalt Liner (Special Issue : Advanced Metallization for ULSI Applications)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Kokaze Yutaka
Institute for Semiconductor Technologies, ULVAC Inc., Susono, Shizuoka 410-1231, Japan
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Kumamoto Shouichirou
Institute of Semiconductor and Electronics Technologies, ULVAC, Inc., Susono, Shizuoka 410-1231, Japan
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Kodaira Shuji
Institute of Semiconductor and Electronics Technologies, ULVAC, Inc., Susono, Shizuoka 410-1231, Japan
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Sakamoto Yuta
Institute of Semiconductor and Electronics Technologies, ULVAC Inc., 1220-1 Suyama, Susono, Shizuoka 410-1231, Japan
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Hamaguchi Junichi
Institute of Semiconductor and Electronics Technologies, ULVAC Inc., 1220-1 Suyama, Susono, Shizuoka 410-1231, Japan
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Endo Youhei
Institute of Semiconductor and Electronics Technologies, ULVAC, Inc., Susono, Shizuoka 410-1231, Japan
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Harada Masamichi
Institute of Semiconductor and Electronics Technologies, ULVAC, Inc., Susono, Shizuoka 410-1231, Japan
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Higuchi Yasushi
Institute of Semiconductor and Electronics Technologies, ULVAC, Inc., Susono, Shizuoka 410-1231, Japan
関連論文
- Improved step coverage of Cu seed layers by magnetic-field-assisted lonized sputtering (Special issue: Advanced metallization for ULSI applications)
- Reactive Ion Etching Process of Transition-Metal Oxide for Resistance Random Access Memory Device
- Dry Etching Process for Pb(Zr,Ti)O3 Thin-Film Actuators
- Performance of Integrated Cu Gap-Filling Process with Chemical Vapor Deposition Cobalt Liner (Special Issue : Advanced Metallization for ULSI Applications)