Switchable Pt/TiO2-x/Pt Schottky Diodes
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概要
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Current–voltage ($I$–$V$) characteristics were investigated in Pt/TiO2-x/Pt devices, and the effect of annealing temperature of preparing TiO2-x was studied. All the micro-fabricated Pt/TiO2-x/Pt devices in initial state show a rectifying $I$–$V$ behavior, which is attributed to the Schottky-like barrier at the TiO2-x/Pt (top electrode, TE) interface. In the initial state, the forward current was observed under the positive bias. After applying a negative pulse voltage, the forward current under the negative bias was observed, demonstrating a switch of the Pt/TiO2-x/Pt diode polarity. The reproducible switch is successfully observed at a pulse voltage of $\pm 6.0/50$ ms. However, this switch behavior is absent in the Pt/TiO2-x/Pt diode after high temperature annealing as well as 400 °C. The origin of the rectifying $I$–$V$ behavior in initial state and the polarity switch is attributed to the redistribution of oxygen vacancy (VO) due to applying pulse voltage.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-05-25
著者
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Akinaga Hiro
Nanotechnology Research Institute (nri) National Institute Of Advanced Industrial Science And Techno
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SHIMA Hisashi
Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Techn
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Shima Hisashi
Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Zhong Ni
Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Akinaga Hiro
Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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