Synthesis and Characterization of Pt/Co–O/Pt Trilayer Exhibiting Large Reproducible Resistance Switching

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概要

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• The resistance switching in Pt/Co–O/Pt trilayers has been successfully demonstrated. The trilayers were prepared by radio-frequency magnetron sputtering. The partial pressure of oxygen during sputtering and the post thermal process for the trilayer are crucial to realize the reproducible resistance switching. By adjusting oxygen partial pressure as well as post-annealing temperature and time, large resistance switching was steadily obtainable in both the as deposited and post-annealed Pt/Co–O/Pt trilayers. The resistance switching ratio exceeds $10^{3}$, being sufficiently large for the resistance random access memory (RRAM). Co–O is regarded as a very promising oxide for RRAM having compatibilities with the conventional complementary metal–oxide semiconductor process.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2007-01-25

著者

• Akinaga Hiro

  Nanotechnology Research Institute (nri) National Institute Of Advanced Industrial Science And Techno

• SHIMA Hisashi

  Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Techn

• Tamai Yukio

  Advanced Materials Research Laboratories Sharp Corporation

• Takano Fumiyoshi

  Nanotechnology Research Institute (nri) National Institute Of Advanced Industrial Science And Techno

• Inoue Isao

  Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562

• Tamai Yukio

  Advanced Materials Research Laboratories, Sharp Corporation, Fukuyama, Hiroshima 721-8522, Japan

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