Structural and Magnetic Properties of Nitrogen Doped GaMnAs
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概要
- 論文の詳細を見る
Structural and magnetic properties of GaMn(N)As epitaxial films ($\text{Mn}=1.4--10.9$%, $\text{N}=0--1.4$%) have been investigated. The samples were prepared by molecular beam epitaxy (MBE) with a radio frequency plasma nitrogen source. The crystal growth was similar to conventional GaMnAs films, and reflection high-energy electron diffraction (RHEED) patterns showed a ($1{\times}2$) reconstructed surface. The Curie temperature ($T_{\text{C}}$) decreases gradually with increasing N concentration in all Mn concentration ranges. The interstitial nitrogen and/or disorder induced by nitrogen incorporation are thought to be responsible for the $T_{\text{C}}$ reduction.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-08-25
著者
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Akinaga Hiro
Nanotechnology Research Institute (nri) National Institute Of Advanced Industrial Science And Techno
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Manago Takashi
Department Of Electronics And Computer Science Faculty Of Science Engineering Tokyo University Of Sc
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Manago Takashi
Department of Electronics and Computer Science, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-Dori, Sanyo-Onoda, Yamaguchi 756-0884, Japan
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Manago Takashi
Department of Applied Physics, Fukuoka University, Fukuoka 814-0180, Japan
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