Suu Koukou | Institute For Semiconductor Technologies Ulvac Inc.
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概要
関連著者
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Suu Koukou
Institute For Semiconductor Technologies Ulvac Inc.
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Suu Koukou
Institute for Semiconductor and Electronics Technologies, ULVAC Inc., Susono, Shizuoka 410-1231, Japan
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SUU Koukou
Institute for Super Materials, ULVAC Japan, Ltd.
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TANI Noriaki
Institute for Super Materials, ULVAC Japan, Ltd.
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Suu K
Ulvac Inc. Shizuoka Jpn
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Nishioka Yutaka
Institute For Semiconductor Technologies Ulvac Inc.
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Tani Noriaki
Institute For Super Materials Ulvac Japan Ltd.
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Nishioka Yasushiro
Texas Instruments Tsukuba R & D Center
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Nishioka Yasushiro
Tsukuba Research And Development Center Japan Texas Instruments
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OSAWA Akira
Institute for Super Materials, ULVAC Japan, Ltd.
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NISHIOKA Yutaka
Institute for Super Materials, ULVAC JAPAN, Ltd.
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Osawa Akira
Institute For Super Materials Ulvac Japan Ltd.
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Nishioka Y
Tsukuba Research And Development Center Japan Texas Instruments
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Arboleda Nelson
Graduate School Of Engineering Osaka University
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Akinaga Hiro
Nanotechnology Research Institute (nri) National Institute Of Advanced Industrial Science And Techno
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ROMAN Tanglaw
Graduate School of Engineering, Osaka University
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SHIMA Hisashi
Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Techn
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Ishikawa M
Institute For Solid State Physics The University Of Tokyo
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Shibata Mari
Ulsi Engineering Division Fujitsu Limited
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Nakamura K
Department Of Electrical Engineering School Of Engineering Nagoya University
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Ishikawa Mitsuo
Department Of Chemical Technology Kurashiki University Of Science And Arts
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David Melanie
Graduate School Of Engineering Osaka University
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Mihara Satoru
Ulsi Engineering Division Fujitsu Limited
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Nakamura Moritaka
Ulsi Engineering Division Fujitsu Limited
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Ishikawa M
Joint Research Center For Atom Technology(jrcat) Angstrom Technology Partnership
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ISHIKAWA Michio
Institute for Super Materials, ULVAC Japan, Ltd.
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NAKAMURA Kyuzo
Institute for Super Materials, ULVAC Japan, Ltd.
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OZAWA Takanori
VLSI R&D Division, ROHM Co., Ltd.
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SAMESHIMA Katsumi
VLSI R&D Division, ROHM Co., Ltd.
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KAMISAWA Akira
VLSI R&D Division, ROHM Co., Ltd.
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TAKASU Hideshi
VLSI R&D Division, ROHM Co., Ltd.
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OZAWA Soichiro
ULSI Engineering Division, FUJITSU LIMITED
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NOSHIRO Hideyuki
ULSI Engineering Division, FUJITSU LIMITED
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HORII Yoshimasa
ULSI Engineering Division, FUJITSU LIMITED
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TAKAMATSU Tomohiro
ULSI Engineering Division, FUJITSU LIMITED
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MASUDA Takeshi
Institute for Super Materials, ULVAC JAPAN, Ltd.
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MIYAGUCHI Yusuke
Institute for Super Materials, ULVAC JAPAN, Ltd.
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YAMAZAKI Tatsuya
ULSI Engineering Division, FUJITSU LIMITED
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Masuda T
Division Of Polymer Chemistry Graduate School Of Engineerng Kyoto University
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Ozawa Soichiro
Ulsi Engineering Division Fujitsu Limited
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Ozawa Takanori
Vlsi R&d Division Rohm Co. Ltd.
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Takasu Hideshi
Vlsi R&d Division Rohm Co. Ltd.
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Kamisawa Akira
Vlsi R&d Division Rohm Co. Ltd.
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Kishi Hirofumi
Graduate School Of Engineering Osaka University
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Horii Yoshimasa
Ulsi Engineering Division Fujitsu Limited
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Jimbo Takehito
Institute For Semiconductor Technologies Ulvac Inc.
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Ishikawa M
Toshiba Corporation Advanced Semiconductor Devices Research Laboratories
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Hori Masaru
Plasma Nanotechnology Research Center Nagoya University
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Miyaguchi Yusuke
Ulvac Japan Ltd.
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Takamatsu Tomohiro
Ulsi Engineering Division Fujitsu Limited
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Ishikawa Kenji
Plasma Technology Laboratory Association Of Super-advanced Electronics Technologies(aset)
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Kasai Hideaki
Graduate School Of Engineering Osaka University
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Takano Fumiyoshi
Nanotechnology Research Institute (nri) National Institute Of Advanced Industrial Science And Techno
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Noshiro Hideyuki
Ulsi Engineering Division Fujitsu Limited
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Sameshima Katsumi
Vlsi R&d Division Rohm Co. Ltd.
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Yamazaki Tatsuya
Ulsi Engineering Division Fujitsu Limited
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Masuda Takeshi
Institute For Environmental Sciences
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Kono Akihiro
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Sekine Makoto
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Hayashi Toshio
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Jimbo Takehito
Institute for Semiconductor Technologies, ULVAC Inc., 1220-1 Suyama, Susono, Shizuoka 410-1231, Japan
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Koutsaroff Ivoyl
Gennum Corporation, 970 Fraser Drive, Burlington, Ontario L7L 5P5, Canada
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Bernacki Thomas
Gennum Corporation, 970 Fraser Drive, Burlington, Ontario L7L 5P5, Canada
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Zelner Marina
Gennum Corporation, 970 Fraser Drive, Burlington, Ontario L7L 5P5, Canada
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Cervin-Lawry Andrew
Gennum Corporation, 970 Fraser Drive, Burlington, Ontario L7L 5P5, Canada
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Ishikawa Kenji
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Nishioka Yutaka
Institute for Semiconductor Technologies, ULVAC Inc., Susono, Shizuoka 410-1231, Japan
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Arboleda Nelson
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Muramatsu Hidenobu
Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Kokaze Yutaka
Institute for Semiconductor Technologies, ULVAC Inc., Susono, Shizuoka 410-1231, Japan
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Kishi Hirofumi
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kasai Hideaki
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Roman Tanglaw
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Shima Hisashi
Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Takano Fumiyoshi
Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Ishikawa Kenji
Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Hori Masaru
Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Sekine Makoto
Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan
著作論文
- Preparation of (Pb, La)(Zr, Ti)O_3 Ferroelectric Films by RF Sputtering on Large Substrate
- Pb Content Control in Sputtered PZT Films for FRAM Mass Production
- Stability Control of Composition of RF-Sputtered Pb(Zr, Ti)O_3 Ferroelectric Thin Film
- Dissociation Channels of c-C4F8 to CF2 Radical in Reactive Plasma
- Reactive Ion Etching Process of Transition-Metal Oxide for Resistance Random Access Memory Device
- Characterization of Thin-Film Decoupling and High-Frequency (Ba,Sr)TiO3 Capacitors on Al2O3 Ceramic Substrates