Hayashi Toshio | Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
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概要
- Hayashi Toshioの詳細を見る
- 同名の論文著者
- Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japanの論文著者
関連著者
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Hayashi Toshio
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Ishikawa Kenji
Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Hori Masaru
Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Sekine Makoto
Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Kono Akihiro
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Suu Koukou
Institute for Semiconductor and Electronics Technologies, ULVAC Inc., Susono, Shizuoka 410-1231, Japan
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Hori Masaru
Plasma Nanotechnology Research Center Nagoya University
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Sekine Makoto
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Suu Koukou
Institute For Semiconductor Technologies Ulvac Inc.
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Ishikawa Kenji
Plasma Technology Laboratory Association Of Super-advanced Electronics Technologies(aset)
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Ishikawa Kenji
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
著作論文
- Dissociation Channels of c-C4F8 to CF2 Radical in Reactive Plasma
- Quantum Chemical Investigation of Si Chemical Dry Etching by Flowing NF into N Downflow Plasma
- Quantum Chemical Investigation for Chemical Dry Etching of SiO by Flowing NF into H Downflow Plasma
- Dissociations of C
- Dissociations of C₅F₈ and C₅HF₇ in Etching Plasma (Special Issue : Dry Process)