Dissociations of C₅F₈ and C₅HF₇ in Etching Plasma (Special Issue : Dry Process)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Hayashi Toshio
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Ishikawa Kenji
Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Hori Masaru
Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Sekine Makoto
Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan
関連論文
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- Laser Scattering Diagnosis of a 60-Hz Non-Equilibrium Atmospheric Pressure Plasma Jet
- Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma
- In-situ Time-Resolved Infrared Spectroscopic Study of Silicon-Oxide Surface during Selective Etching over Silicon in Fluorocarbon Plasma
- Quantum Chemical Investigation of Si Chemical Dry Etching by Flowing NF into N Downflow Plasma
- Quantum Chemical Investigation for Chemical Dry Etching of SiO by Flowing NF into H Downflow Plasma
- Effects of Irradiation with Ions and Photons in Ultraviolet-Vacuum Ultraviolet Regions on Nano-Surface Properties of Polymers Exposed to Plasmas (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Dissociations of C
- Photoluminescence Study of Plasma-Induced Damage of GaInN Single Quantum Well
- Photoluminescence Study of Plasma-Induced Damage of GaInN Single Quantum Well (Special Issue : Recent Advances in Nitride Semiconductors)
- Dissociations of C₅F₈ and C₅HF₇ in Etching Plasma (Special Issue : Dry Process)
- Direct exposure of non-equilibrium atmospheric pressure plasma confers simultaneous oxidative and ultraviolet modifications in biomolecules