Photoluminescence Study of Plasma-Induced Damage of GaInN Single Quantum Well
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概要
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Plasma-induced damage (PID) due to Cl<inf>2</inf>/SiCl<inf>4</inf>/Ar plasma etching of the GaN capping layer (CAP)/GaInN single quantum well (SQW)/GaN structure was investigated by conventional photoluminescence (PL), transmission electron microscopy (TEM), and time-resolved and temperature-dependent photoluminescence (TRPL). SQW PL intensity remained constant initially, although plasma etching of the CAP layer proceeded, but when the etching thickness reached a certain amount ({\sim}60 nm above the SQW), PL intensity started to decrease sharply. On the other hand, TEM observations show that the physical damage (structural damage) was limited to the topmost surface region. These findings can be explained by the results of TRPL studies, which revealed that there exist two different causes of PID. One is an increase in the number of nonradiative recombination centers, which mainly affects the PL intensity. The other is an increase in the quantum level fluctuation owing mainly to physical damage.
- 2013-08-25
著者
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TOMIYA Shigetaka
Sony Corporation Research Center
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Hori Masaru
Plasma Nanotechnology Research Center Nagoya University
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Ishikawa Kenji
Plasma Nanotechnology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Ishikawa Kenji
Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Izumi Shouichiro
Sony Semiconductor Corporation, Shiroishi, Miyagi 989-0734, Japan
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Minami Masaki
Sony Semiconductor Corporation, Shiroishi, Miyagi 989-0734, Japan
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Kamada Michiru
Sony Semiconductor Corporation, Shiroishi, Miyagi 989-0734, Japan
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Tatsumi Tetsuya
Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Yamaguchi Atsushi
Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japan
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Hori Masaru
Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan
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