Photoluminescence Study of Plasma-Induced Damage of GaInN Single Quantum Well (Special Issue : Recent Advances in Nitride Semiconductors)
スポンサーリンク
概要
著者
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TOMIYA Shigetaka
Sony Corporation Research Center
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Ishikawa Kenji
Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan
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Izumi Shouichiro
Sony Semiconductor Corporation, Shiroishi, Miyagi 989-0734, Japan
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Minami Masaki
Sony Semiconductor Corporation, Shiroishi, Miyagi 989-0734, Japan
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Kamada Michiru
Sony Semiconductor Corporation, Shiroishi, Miyagi 989-0734, Japan
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Tatsumi Tetsuya
Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Yamaguchi Atsushi
Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501, Japan
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Hori Masaru
Plasma Nano-technology Research Center, Nagoya University, Nagoya 464-8603, Japan
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- Photoluminescence Study of Plasma-Induced Damage of GaInN Single Quantum Well
- Photoluminescence Study of Plasma-Induced Damage of GaInN Single Quantum Well (Special Issue : Recent Advances in Nitride Semiconductors)
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