Prediction of Fluctuations in Plasma–Wall Interactions Using an Equipment Engineering System
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概要
- 論文の詳細を見る
The fluctuations in etch rates caused by changes in chamber conditions were studied. Excess deposition of C–F polymer on the chamber wall increased CFx density while H was consumed by the polymer and/or was deactivated on the conductive surface of Si electrodes. The change in radical densities had a clear relationship with the SiN etch rate. The etch rate was accurately predicted by statistical analysis using equipment engineering system (EES) data and optical emission spectroscopy (OES) signals which were extracted by considering both the physical model and the results of statistical analysis.
- 2009-08-25
著者
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Kawashima Atsushi
Semiconductor Technology Development Division, SBG, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Kawashima Atsushi
Semiconductor Technology Development Division, SBG, CPDG, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Tanaka Yasuhito
Quality Reliability Division, SBG, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Fukasawa Masanaga
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Takagi Hitoshi
Semiconductor Technology Development Division, SBG, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Tatsumi Tetsuya
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Tatsumi Tetsuya
Semiconductor Technology Development Division, SBG, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Kuboi Nobuyuki
Semiconductor Technology Development Division, SBG, CPDG, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Oshima Keiji
Semiconductor Technology Development Division, SBG, CPDG, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Nagahata Kazunori
Semiconductor Technology Development Division, SBG, CPDG, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Oshima Keiji
Semiconductor Technology Development Division, SBG, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Kuboi Nobuyuki
Semiconductor Technology Development Division, SBG, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Sakayori Hiroyuki
Quality Reliability Division, SBG, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Tatsumi Tetsuya
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Fukasawa Masanaga
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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TATSUMI Tetsuya
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation
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KUBOI Nobuyuki
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation
関連論文
- Prediction of Fluctuations in Plasma–Wall Interactions Using an Equipment Engineering System
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