Reducing Damage to Si Substrates during Gate Etching Processes
スポンサーリンク
概要
- 論文の詳細を見る
The mechanism of formation of a "Si recess" that appears during gate poly-Si etching was studied. Hydrogen in HBr plasma penetrates through a thin gate oxide film and generates dislocated sites in the Si substrate. We developed a molecular dynamics (MD) simulation to clarify both the penetration depth of H and O and the dislocation of Si. The damage was successfully minimized by controlling the high energy peak in the ion energy distribution function (IEDF) to be lower than the threshold energy of ion penetration.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-07-25
著者
-
Hamaguchi Satoshi
Center For Atomic And Molecular Technologies Graduate School Of Engineering Osaka University
-
Tatsumi Tetsuya
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Fukasawa Masanaga
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Fukasawa Masanaga
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Ohchi Tomokazu
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Kobayashi Shoji
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Kugimiya Katsuhisa
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Kinoshita Takashi
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Takizawa Toshifumi
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
-
Kamide Yukihiro
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Tatsumi Tetsuya
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Tatsumi Tetsuya
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Tatsumi Tetsuya
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
関連論文
- Temporal Evolution of Ion Fragment Production from Dimethylsilane by a Hot Tungsten Wire and Compounds Deposited on the Tungsten Surface
- Fragment Ions of Dimethylsilane Produced by Hot Tungsten Wires
- Prediction of Fluctuations in Plasma–Wall Interactions Using an Equipment Engineering System
- Si Recess of Polycrystalline Silicon Gate Etching: Damage Enhanced by Ion Assisted Oxygen Diffusion
- Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma
- Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring
- Analysis of Plasma Wall Reactions Using Virtual Optical Emission Spectrometry Signal during Dielectric Etching
- Fragment Ions of Dimethylsilane Produced by Hot Tungsten Wires
- Numerical Simulation Method for Plasma-Induced Damage Profile in SiO Etching
- Temporal Evolution of Ion Fragment Production from Dimethylsilane by a Hot Tungsten Wire and Compounds Deposited on the Tungsten Surface
- Fragment Ions of Methylsilane Produced by Hot Tungsten Wires
- Sputtering Yields of CaO, SrO, and BaO by Monochromatic Noble Gas Ion Bombardment
- Extracellular Matrix Patterning for Cell Alignment by Atmospheric Pressure Plasma Jets
- Radio-Frequency-Driven Atmospheric-Pressure Plasmas in Contact with Liquid Water
- Reducing Damage to Si Substrates during Gate Etching Processes
- Molecular Dynamics Simulations of Organic Polymer Dry Etching at High Substrate Temperatures
- Wavelength Dependence of Photon-Induced Interface Defects in Hydrogenated Silicon Nitride/Si Structure during Plasma Etching Processes
- Measurement of Magnesium Oxide Sputtering Yields by He and Ar Ions with a Low-Energy Mass-Selected Ion Beam System
- Numerical Analysis of Incident Angle Effects in Reactive Sputtering Deposition of Amorphous SiO2
- Arrangement of PC12 Cells on a Silicon Chip via Extracellular Matrix (ECM) Layer Patterning by Atmospheric Pressure Plasmas
- Wavelength Dependence of Photon-Induced Interface Defects in Hydrogenated Silicon Nitride/Si Structure during Plasma Etching Processes (Special Issue : Dry Process)
- Modeling and Simulation of Plasma-Induced Damage Distribution during Hole Etching of SiO_2 over Si Substrate by Fluorocarbon Plasma