Fragment Ions of Methylsilane Produced by Hot Tungsten Wires
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概要
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Ionic fragmentation in catalytic chemical vapor deposition (Cat-CVD, which is also known as hot wire CVD) processes, is studied with a use of a low-energy mass analyzed ion beam system, in which the mass and energy distributions of fragment ions produced from a methylsilane gas in a chamber with a hot tungsten wire (i.e., catalyzer) are measured. The mass analysis shows that dominant fragment ions from methylsilane are typically H1+, H2+, H3+, CH3+, SiH+, and SiCH4+. It is found that the energy distributions of these ions are narrow and no energetic ions are produced. This indicates that, in actual methylsilane Cat-CVD processes, the produced ions are unlikely to cause any significant damage to the deposited films. The ion production rates are also found to be strongly dependent on the catalyzer temperature.
- 2006-03-15
著者
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Hamaguchi Satoshi
Center For Atomic And Molecular Technologies Graduate School Of Engineering Osaka University
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Kiuchi Masato
Center For Atomic And Molecular Technologies Graduate School Of Engineering Osaka University
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YOSHIMURA Satoru
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University
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TOH Akinori
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University
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SUGIMOTO Satoshi
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University
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Toh Akinori
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Yoshimura Satoru
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Kiuchi Masato
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Maeda Takuya
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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- Temporal Evolution of Ion Fragment Production from Dimethylsilane by a Hot Tungsten Wire and Compounds Deposited on the Tungsten Surface
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