Fragment Ions of Dimethylsilane Produced by Hot Tungsten Wires
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概要
- 論文の詳細を見る
Fragment ions produced from dimethylsilane with a hot tungsten wire (i.e., catalyzer) in catalytic chemical vapor deposition (Cat-CVD, which is also known as hot wire CVD) processes are identified with a use of a low-energy mass analyzed ion beam system. The mass analysis shows that dominant fragment ions from dimethylsilane are H1+, H2+, CH3+, Si+, SiH3+, SiCH4+, SiC2H+, and SiC2H7+. The energy distributions of these ions are also measured. It is found that the spreads of the energy distributions are narrow and no energetic ions are produced, suggesting that the produced ions are unlikely to cause any significant damage to the deposited films in actual dimethylsilane Cat-CVD processes. The ion production rates are found to be strongly dependent on the catalyzer temperature.
- 2006-10-30
著者
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Hamaguchi Satoshi
Center For Atomic And Molecular Technologies Graduate School Of Engineering Osaka University
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Kiuchi Masato
Center For Atomic And Molecular Technologies Graduate School Of Engineering Osaka University
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YOSHIMURA Satoru
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University
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TOH Akinori
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University
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SUGIMOTO Satoshi
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University
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Sugimoto Satoshi
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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