Sputtering Yields of CaO, SrO, and BaO by Monochromatic Noble Gas Ion Bombardment
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概要
- 論文の詳細を見る
Although MgO is widely used for barrier coating in the current generation of commercial plasma display panel (PDP) cells, other alkaline earth oxides have been studied as alternatives to MgO because some of them have lower discharge breakdown voltages for PDP cells, which would increase energy efficiency of the cells. On the other hand, the resistance against physical sputtering is another critical parameter for barrier coating. In this work, sputtering yields of CaO, SrO, and BaO by monochromatic He+, Ar+, or Kr+ ion beams of normal incidence have been obtained experimentally at relatively low incident energies by a mass-selected ion beam system. Despite the large differences in mass among the target materials, sputtering yields are found to be similar in magnitude among them for a given incident energy. It has been also found that sputtering yields depend weekly on the mass of incident species among Ne+, Ar+, Kr+, and Xe+ ions.
- 2012-08-25
著者
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Hamaguchi Satoshi
Center For Atomic And Molecular Technologies Graduate School Of Engineering Osaka University
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Kiuchi Masato
Center For Atomic And Molecular Technologies Graduate School Of Engineering Osaka University
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YOSHIMURA Satoru
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University
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Nishitani Mikihiko
Image Devices Development Center, Matsushita Electric Industrial Co., Ltd., 3-1-1 Yagumo-naka-machi, Moriguchi, Osaka 570-8501, Japan
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Nishitani Mikihiko
Image Devices Development Center, Panasonic Corporation, Moriguchi, Osaka 570-8501, Japan
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Yoshimura Satoru
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Terauchi Masaharu
Image Devices Development Center, Matsushita Electric Industrial Co., Ltd., 3-1-1 Yagumo-naka-machi, Moriguchi, Osaka 570-8501, Japan
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Terauchi Masaharu
Image Devices Development Center, Panasonic Corporation, Moriguchi, Osaka 570-8501, Japan
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Hine Kiyohiro
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Hashimoto Jun
Image Devices Development Center, Panasonic Corporation, Moriguchi, Osaka 570-8501, Japan
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Honda Yosuke
Image Devices Development Center, Panasonic Corporation, Moriguchi, Osaka 570-8501, Japan
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Hine Kiyohiro
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Kiuchi Masato
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Hamaguchi Satoshi
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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HONDA Yosuke
Image Devices Development Center, Panasonic Corp.
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