Temporal Evolution of Ion Fragment Production from Dimethylsilane by a Hot Tungsten Wire and Compounds Deposited on the Tungsten Surface
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-15
著者
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Hamaguchi Satoshi
Center For Atomic And Molecular Technologies Graduate School Of Engineering Osaka University
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Kiuchi Masato
Center For Atomic And Molecular Technologies Graduate School Of Engineering Osaka University
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YOSHIMURA Satoru
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University
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TOH Akinori
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University
関連論文
- Temporal Evolution of Ion Fragment Production from Dimethylsilane by a Hot Tungsten Wire and Compounds Deposited on the Tungsten Surface
- Fragment Ions of Dimethylsilane Produced by Hot Tungsten Wires
- Si Recess of Polycrystalline Silicon Gate Etching: Damage Enhanced by Ion Assisted Oxygen Diffusion
- Fragment Ions of Dimethylsilane Produced by Hot Tungsten Wires
- Temporal Evolution of Ion Fragment Production from Dimethylsilane by a Hot Tungsten Wire and Compounds Deposited on the Tungsten Surface
- Fragment Ions of Methylsilane Produced by Hot Tungsten Wires
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