Hamaguchi Satoshi | Center For Atomic And Molecular Technologies Graduate School Of Engineering Osaka University
スポンサーリンク
概要
- 同名の論文著者
- Center For Atomic And Molecular Technologies Graduate School Of Engineering Osaka Universityの論文著者
関連著者
-
Hamaguchi Satoshi
Center For Atomic And Molecular Technologies Graduate School Of Engineering Osaka University
-
Kiuchi Masato
Center For Atomic And Molecular Technologies Graduate School Of Engineering Osaka University
-
YOSHIMURA Satoru
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University
-
TOH Akinori
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University
-
SUGIMOTO Satoshi
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University
-
Kitano Katsuhisa
Center For Atomic And Molecular Technologies Osaka Univ.
-
Tatsumi Tetsuya
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Fukasawa Masanaga
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Nishitani Mikihiko
Image Devices Development Center, Matsushita Electric Industrial Co., Ltd., 3-1-1 Yagumo-naka-machi, Moriguchi, Osaka 570-8501, Japan
-
Tatsumi Tetsuya
Semiconductor Technology Development Division, Core Device Development Group, R&D Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Hamaguchi Satoshi
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
-
Hamaguchi Satoshi
Center for Atomic and Molecular Technologies, Osaka University, Suita, Osaka 565-0871, Japan
-
Ando Ayumi
Center for Atomic and Molecular Technologies, Osaka University, Suita, Osaka 565-0871, Japan
-
Asano Toshifumi
Division of Neuroscience, Department of Developmental Biology and Neurosciences, Tohoku University, Sendai 980-8577, Japan
-
Terauchi Masaharu
Image Devices Development Center, Matsushita Electric Industrial Co., Ltd., 3-1-1 Yagumo-naka-machi, Moriguchi, Osaka 570-8501, Japan
-
Hine Kiyohiro
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
-
Hashimoto Jun
Image Devices Development Center, Panasonic Corporation, Moriguchi, Osaka 570-8501, Japan
-
Hine Kiyohiro
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
-
Tatsumi Tetsuya
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
URISU Tsuneo
FIRST Research Center for Innovative Nanobiodevice, Nagoya University, Furo-cho, Chikusa, Nagoya, Aichi 464-8603, Japan
-
ASANO Toshifumi
Division of Neuroscience, Department of Developmental Biology and Neurosciences, Tohoku University, 2-1-1 Katahira, Aoba, Sendai, Miyagi 980-8577, Japan
-
ANDO Ayumi
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
-
Yamashiro Masashi
Center For Atomic And Molecular Technologies Graduate School Of Engineering Osaka University
-
Yamada Hideaki
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
-
Karahashi Kazuhiro
Center for Atomic and Molecular Technologies, Osaka University, Suita, Osaka 565-0871, Japan
-
Kitano Katsuhisa
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
-
Aoki Hironori
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
-
Toh Akinori
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
-
Fukasawa Masanaga
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Fukasawa Masanaga
Semiconductor Technology Development Division, SBG, PDSG, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Ohchi Tomokazu
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Kobayashi Shoji
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Kugimiya Katsuhisa
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Kinoshita Takashi
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Takizawa Toshifumi
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
-
Kamide Yukihiro
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Ito Tomoko
Center for Atomic and Molecular Technologies, Osaka University, Suita, Osaka 565-0871, Japan
-
Nishitani Mikihiko
Image Devices Development Center, Panasonic Corporation, Moriguchi, Osaka 570-8501, Japan
-
Sugimoto Satoshi
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
-
Tatsumi Tetsuya
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Tatsumi Tetsuya
Semiconductor Technology Development Division, SBG, PDSG, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
Yamashiro Masashi
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
-
Yoshimura Satoru
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
-
Yoshimura Satoru
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
-
Hamaguchi Satoshi
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 464-8603, Japan
-
Sayed Md.
Department of Structural Molecular Science, The Graduate University for Advanced Studies, Okazaki, Aichi 444-8585, Japan
-
Tero Ryugo
Electronics-Inspired Interdisciplinary Research Institute, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
-
Urisu Tsuneo
FIRST Research Center for Innovative Nanobiodevice, Nagoya University, Nagoya 464-8603, Japan
-
Terauchi Masaharu
Image Devices Development Center, Panasonic Corporation, Moriguchi, Osaka 570-8501, Japan
-
Honda Yosuke
Image Devices Development Center, Panasonic Corporation, Moriguchi, Osaka 570-8501, Japan
-
Ikuse Kazumasa
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
-
Kiuchi Masato
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
-
Kiuchi Masato
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
-
Maeda Takuya
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
-
Taguchi Masafumi
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 464-8603, Japan
-
Kitano Katsuhisa
Center for Atomic and Molecular Technologies, Osaka University, Suita, Osaka 565-0871, Japan
-
Fukasawa Masanaga
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
-
UNO Hidetaka
FIRST Research Center for Innovative Nanobiodevice, Nagoya University, Furo-cho, Chikusa, Nagoya, Aichi 464-8603, Japan
-
Hamaguchi Satoshi
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
-
HONDA Yosuke
Image Devices Development Center, Panasonic Corp.
-
TATSUMI Tetsuya
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation
著作論文
- Temporal Evolution of Ion Fragment Production from Dimethylsilane by a Hot Tungsten Wire and Compounds Deposited on the Tungsten Surface
- Fragment Ions of Dimethylsilane Produced by Hot Tungsten Wires
- Si Recess of Polycrystalline Silicon Gate Etching: Damage Enhanced by Ion Assisted Oxygen Diffusion
- Fragment Ions of Dimethylsilane Produced by Hot Tungsten Wires
- Temporal Evolution of Ion Fragment Production from Dimethylsilane by a Hot Tungsten Wire and Compounds Deposited on the Tungsten Surface
- Fragment Ions of Methylsilane Produced by Hot Tungsten Wires
- Sputtering Yields of CaO, SrO, and BaO by Monochromatic Noble Gas Ion Bombardment
- Extracellular Matrix Patterning for Cell Alignment by Atmospheric Pressure Plasma Jets
- Radio-Frequency-Driven Atmospheric-Pressure Plasmas in Contact with Liquid Water
- Reducing Damage to Si Substrates during Gate Etching Processes
- Molecular Dynamics Simulations of Organic Polymer Dry Etching at High Substrate Temperatures
- Measurement of Magnesium Oxide Sputtering Yields by He and Ar Ions with a Low-Energy Mass-Selected Ion Beam System
- Numerical Analysis of Incident Angle Effects in Reactive Sputtering Deposition of Amorphous SiO2
- Arrangement of PC12 Cells on a Silicon Chip via Extracellular Matrix (ECM) Layer Patterning by Atmospheric Pressure Plasmas