Modeling and Simulation of Plasma-Induced Damage Distribution during Hole Etching of SiO_2 over Si Substrate by Fluorocarbon Plasma
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概要
- 論文の詳細を見る
- 2012-12-25
著者
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Kobayashi Shoji
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Kinoshita Takashi
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Fukasawa Masanaga
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Komachi Jun
Semiconductor Technology Development Division, CDDG, R&DPF, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Ansai Hisahiro
Semiconductor Technology Development Division, CDDG, R&DPF, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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TATSUMI Tetsuya
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation
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KUBOI Nobuyuki
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation
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ANSAI Hisahiro
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation
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KINOSHITA Takashi
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation
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KOBAYASHI Shoji
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation
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KOMACHI Jun
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation
関連論文
- Prediction of Fluctuations in Plasma–Wall Interactions Using an Equipment Engineering System
- Si Recess of Polycrystalline Silicon Gate Etching: Damage Enhanced by Ion Assisted Oxygen Diffusion
- Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma
- Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring
- Analysis of Plasma Wall Reactions Using Virtual Optical Emission Spectrometry Signal during Dielectric Etching
- Numerical Simulation Method for Plasma-Induced Damage Profile in SiO Etching
- Reducing Damage to Si Substrates during Gate Etching Processes
- Wavelength Dependence of Photon-Induced Interface Defects in Hydrogenated Silicon Nitride/Si Structure during Plasma Etching Processes
- Wavelength Dependence of Photon-Induced Interface Defects in Hydrogenated Silicon Nitride/Si Structure during Plasma Etching Processes (Special Issue : Dry Process)
- Modeling and Simulation of Plasma-Induced Damage Distribution during Hole Etching of SiO_2 over Si Substrate by Fluorocarbon Plasma