Ansai Hisahiro | Semiconductor Technology Development Division, CDDG, R&DPF, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
スポンサーリンク
概要
- 同名の論文著者
- Semiconductor Technology Development Division, CDDG, R&DPF, Sony Corporation, Atsugi, Kanagawa 243-0014, Japanの論文著者
関連著者
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Kobayashi Shoji
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Kinoshita Takashi
Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Fukasawa Masanaga
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Komachi Jun
Semiconductor Technology Development Division, CDDG, R&DPF, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Ansai Hisahiro
Semiconductor Technology Development Division, CDDG, R&DPF, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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TATSUMI Tetsuya
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation
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KUBOI Nobuyuki
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation
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ANSAI Hisahiro
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation
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KINOSHITA Takashi
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation
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KOBAYASHI Shoji
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation
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KOMACHI Jun
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation
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Kuboi Nobuyuki
Semiconductor Technology Development Division, SBG, CPDG, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
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Tatsumi Tetsuya
Semiconductor Technology Development Division, Advanced Device Technology Platform, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan
著作論文
- Numerical Simulation Method for Plasma-Induced Damage Profile in SiO Etching
- Modeling and Simulation of Plasma-Induced Damage Distribution during Hole Etching of SiO_2 over Si Substrate by Fluorocarbon Plasma