Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors
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概要
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The effects of plasma process-induced physical damage on n-channel metal–oxide–semiconductor field-effect transistor (MOSFET) performance were investigated in detail in terms of threshold voltage ($V_{\text{th}}$) and $V_{\text{th}}$ shift ($\Delta V_{\text{th}}$). The Si recess structure formed by ion bombardment was primarily focused on in this study. Defect site density was also considered as a possible cause of $\Delta V_{\text{th}}$. The damaged structure and damage formation mechanisms were studied using an optical analysis technique and classical molecular dynamics simulations. The plasma-induced $\Delta V_{\text{th}}$ of devices with various recess depths was estimated by technology computer-aided design (TCAD) simulations, by taking into account the bias power dependence of damaged layer thickness. The $V_{\text{th}}$ related to the recess structure shifts toward the negative direction in n-channel MOSFETs, indicating an increase in off-state leakage current ($I_{\text{OFF}}$). $|\Delta V_{\text{th}}|$ proportionally increases with the increasing recess depth $d_{\text{R}}$ ($\sim$ bias power), while the underlying defect density does not affect $\Delta V_{\text{th}}$. Moreover, the predicted $V_{\text{th}}$ decrease ($\Delta V_{\text{th}}<0$) with an increase in $d_{\text{R}}$ strongly depends on gate length ($L_{\text{g}}$), i.e., the decrement in $V_{\text{th}}$ is inversely proportional to $L_{\text{g}}$. This suggests that the $d_{\text{R}}$ increase induces an exponential increase in the standby power consumption of advanced devices. We provide a comprehensive relationship between device parameters ($V_{\text{th}}$, $I_{\text{off}}$, and $L_{\text{g}}$) and process parameters for plasma-damaged devices.
- 2010-08-25
著者
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ERIGUCHI Koji
Graduate School of Engineering, Kyoto University
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ONO Kouichi
Graduate School of Engineering, Kyoto University
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Kamei Masayuki
Graduate School Of Engineering Kyoto University
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Nakakubo Yoshinori
Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Matsuda Asahiko
Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Takao Yoshinori
Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Matsuda Asahiko
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Takao Yoshinori
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Nakakubo Yoshinori
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Eriguchi Koji
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Ono Kouichi
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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