A Model Analysis of Feature Profile Evolution and Microscopic Uniformity during Polysilicon Gate Etching in Cl_2/O_2 Plasmas
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-10-30
著者
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Takahashi Kazuo
Department of Electronic Science and Engineering, Kyoto University
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Ono Kouichi
Department Of Aeronautics And Astronautics Graduate School Of Engineering Kyoto University
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Eriguchi Koji
Department Of Aeronautics And Astronautics Graduate School Of Engineering Kyoto University
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OSANO Yugo
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University
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ITABASHI Naoshi
Central Research Laboratory, Hitachi, Ltd.
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MORI Masahito
Central Research Laboratory, Hitachi, Ltd.
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