Effects of Mask Pattern Geometry on Plasma Etching Profiles
スポンサーリンク
概要
- 論文の詳細を見る
Two-dimensional etching profile evolution in two different geometries, namely an axisymmetric hole and an infinitely long trench, has been simulated with the cellular algorithm, to clarify the effects of geometrically different structures on etching profile evolution. The simulation assumed SiO2 etching using CF4 plasmas, owing to the widely employed fluorocarbon plasmas for the fabrication of contact and via holes. Numerical results indicated that the two mask pattern geometries give some differences in profile evolution, depending on condition parameters such as ion energy, mask pattern size, mask height, and reflection probability on mask surfaces. The profile evolution is slower and more anisotropic in a hole than in a trench; in practice, the profile of a trench tends to have prominent lateral etches such as an undercut and a bowing on sidewalls. Moreover, the reactive ion etching lag is less significant for a hole than for a trench. These differences are ascribed to the geometrical shadowing effects of the structure for neutrals, where the incident flux of neutrals is more significantly reduced in a hole than in a trench. The differences are also attributed to the anisotropy of the velocity distribution of neutrals; in effect, the velocity distribution is more anisotropic in a hole, because more particles interact with mask sidewalls to adsorb or reflect thereon in a hole, so that more anisotropic neutrals are transported onto bottom surfaces after passing mask features.
- 2009-09-25
著者
-
Eriguchi Koji
Department Of Aeronautics And Astronautics Graduate School Of Engineering Kyoto University
-
Ono Kouichi
Department Of Aeronautical Engineering Faculty Of Engineering Kyoto University
-
Fukumoto Hiroshi
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
関連論文
- Numerical Analysis of the Electromagnetic Fields in a Microwave Plasma Source Excited by Azimuthally Symmetric Surface Waves
- Arg124Cys Mutation of the βig-h3 Gene in a Japanese Family With Lattice Corneal Dystrophy Type I
- A Comparative Study of Plasma Source-Dependent Charging Polarity in MOSFETs with High-k and SiO_2 Gate Dielectrics
- Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers
- Plasma Diagnostics and Thrust Performance Analysis of a Microwave-Excited Microplasma Thruster
- A Model Analysis of Feature Profile Evolution and Microscopic Uniformity during Polysilicon Gate Etching in Cl_2/O_2 Plasmas
- Molecular-Dynamics-Based Profile Evolution Simulation for Sub-10-nm Si Processing Technology
- Selective Etching of High-k Dielectric HfO_2 Films over Si in BCl_3-Containing Plasmas without rf Biasing
- Molecular Dynamics Analysis of the Formation of Surface Roughness during Si Etching in Chlorine-Based Plasmas
- Three-Dimensional Atomic-Scale Cellular Model and Feature Profile Evolution during Si Etching in Chlorine-Based Plasmas: Analysis of Profile Anomalies and Surface Roughness
- Particle Simulations of Sheath Dynamics in Low-Pressure Capacitively Coupled Argon Plasma Discharges
- Atomic-Scale Cellular Model and Profile Simulation of Si Etching: Analysis of Profile Anomalies and Microscopic Uniformity
- The Applicability of Formal Specification to Maintenance of Large-Scale Software
- Molecular Dynamics Evaluation of Thermal Transport in Naked and Oxide-Coated Silicon Nanowires
- Plasma Formation in a Neutral Gas by a Short-Pulsed, High-Current Electron Beam
- Beam and Plasma Currents in an Injection of a Short-Pulsed, High-Current Electron Beam into Initially-Neutral Gases
- Visible and Ultraviolet High-Intensity Spectral Lines in Electron-Beam-Produced Plasmas
- Etching of High-k Dielectric HfO2 Films in BCl3-Containing Plasmas Enhanced with O2 Addition
- Numerical Investigation on Origin of Microscopic Surface Roughness during Si Etching by Chemically Reactive Plasmas
- Numerical Study on Si Etching by Monatomic Br+/Cl+ Beams and Diatomic Br2+/Cl2+/HBr+ Beams
- Molecular Dynamics Simulation of Si Etching by Off-Normal Cl+ Bombardment at High Neutral-to-Ion Flux Ratios
- Molecular-Dynamics-Based Profile Evolution Simulation for Sub-10-nm Si Processing Technology
- UV〜Near-IR Laser Lines in Electron-Beam-Produced Rare Gas Plasmas
- Effects of Mask Pattern Geometry on Plasma Etching Profiles
- Laser Action of Ionized and Neutral Atomic Lines in Electron-Beam-Produced Rare Gas Plasmas
- On Early-Stage-Excitation Processes of KrII and XeII Lines in Pulsed-Electron-Beam Produced Plasmas
- A Model Analysis of Feature Profile Evolution and Microscopic Uniformity during Polysilicon Gate Etching in Cl2/O2 Plasmas
- An Atomic Scale Model of Multilayer Surface Reactions and the Feature Profile Evolution during Plasma Etching
- Modeling and Simulation of Nanoscale Surface Rippling during Plasma Etching of Si under Oblique Ion Incidence
- Plasma Diagnostics and Thrust Performance Analysis of a Microwave-Excited Microplasma Thruster
- An Improvement of Stillinger–Weber Interatomic Potential Model for Reactive Ion Etching Simulations
- Microwave-Excited High-Density Plasma Column Sustained along Metal Rod at Negative Voltage