A TE-N_2-Laser-Pumped Dye Laser of Littman Type
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概要
著者
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Yasuda Yukio
Department Of Applied Physics Osaka City University
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SOKABE Noburu
Department of Applied Physics,Osaka City University
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MURAI Akira
Department of Applied Physics,Osaka City University
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Sokabe Noburu
Department Of Applied Physics Osaka City University
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Sokabe N
Osaka City Univ. Jpn
関連論文
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- Low-Temperature Formation of Epitaxial NiSi_2 Layers with Solid-Phase Reaction in Ni/Ti/Si(001) Systems
- Thermal Stability and Electrical Properties of (La_2O_3)_(Al_2O_3)_x Composite Films
- Detection and Characterization of Stress-Induced Defects in Gate SiO_2 Films by Conductive Atomic Force Microscopy
- Growth of Silicon Nanocrystal Dots with High Number Density by Ultra-High-Vacuum Chemical Vapor Deposition
- Influence of Structural Variation of Ni Silicide Thin Films on Electrical Property for Contact Materials
- Conductive Atomic Force Microscopy Analysis for Local Electrical Characteristics in Stressed SiO_2 Gate Films
- Pulsed Laser Deposition and Analysis for Structural and Electrical Properties of HfO_2-TiO_2 Composite Films
- Microscopic Analysis of Stress-Induced Leakage Current in Stressed Gate SiO_2 Films Using Conductive Atomic Force Microscopy
- Reactive Deposition Epitaxy of CoSi_2 Films on Clean and Oxygen-Adsorbed Si(001) Surfaces
- Surface and Interface Smoothing of Epitaxial CoSi_2 Films by Solid-Phase Epitaxy Using Adsorbed Oxygen Layers and Two-Step Growth on Si(001) Surfaces
- Structural and Electrical Characteristics of HfO_2 Films Fabricated by Pulsed Laser Deposition
- Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen
- Population Difference and Pulse-Mode Optogalvanic Effect on Hel(2^3S-3^3P) 388.9-nm
- Author's Reply
- Erratum : Excitation Mechanism of the B^3_g-A^3Σ^+_u ir Laser Transition in N_2 Molecule
- A TE-N_2-Laser-Pumped Dye Laser of Littman Type
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- Excitation Process of the N_2 IR (B^3Π_g-A^3Σ^+_u) Laser Transition. II
- Excitation Process of the N_2 IR (B^3Π_g-A^3Σ^+_u) Laser Transition
- Excitation Mechanism of the B^3II_g-A^3Σ^+_u ir Laser Transition in N_2 Molecule
- Nitrogen-Laser-induced B^3Σu→X^3Σg Fluorescence of S_2 Molecules
- Time Relationship btween uv and ir Light Pulses in Nitrogen Laser
- Conductance Oscillations in Hopping Conduction Systems Fabricated by Focused Ion Beam Implantation ( Quantum Dot Structures)
- Conductance Oscillations in Low-Dimensional Ion Implanted Regions Annealed by Rapid Thermal Annealing
- Hydrogen Effects on Heteroepitaxial Growth of Ge Films on Si(111) Surfaces by Solid Phase Epitaxy
- Hydrogen Effects on Si_Ge_x/Si Heteroepitaxial Growth by Si_2H_6- and GeH_4-Source Molecular Beam Epitaxy
- Carrier Transport Properties of Conductive p-Si Wires by Focused Ion Beam Implantation
- Quantum Chemical Study of the Oxidation Sites in Hydrogen- and Water-Terminated Si Dimers : Attempt to Understand the Si-Si Back-Bond Oxidation on the Si Surface
- Rotational Excitation of OH(A^2?^+,υ'=0) Resulting from Dissociative Collision of H_2O with Metastable Argon Atoms
- Local Leakage Current of HfO_2 Thin Films Characterized by Conducting Atomic Force Microscopy
- CH (A^2Δ-X^2Δ) Emission in Ar*(4^3P_)-H_2CO Collision
- A Velocity Measurement of Flowing Afterglows
- On the Dissociative Collision of Water Molecule with Metastable Argon
- Initial Oxidation Processes of H-Terminated Si(100) Surfaces Analyzed using a Random Sequential Adsorption Model
- Influences of Impurities on Oxidation Processes of Si(100) Substrates
- Influences of Impurities on Oxidation Processes of Si(100) Substrates
- Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen
- Microscopic Observation of X-Ray Irradiation Damage in Ultra-Thin SiO_2 Films
- Microscopic Observation of X-Ray Irradiation Damages in Ultra-Thin SiO_2 Films
- Oxide Formation on Si(100)-2×1 Surfaces Studied by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
- Study on Oxidation of Si(100)-2x1 Surfaces by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
- Structural and Electrical Characteristics of HfO_2 Films Fabricated by Pulsed Laser Deposition
- Temperature Dependence of Desorption in Highly Photo-Excited CdS
- Characterization of SOS Films Grown with Amorphous Si Buffer Layers by MOS FET's
- Infrared Enhancement in Nitrogen Laser operating near Threshold by addition of He
- Coulomb Blockade Phenomena in Si Metal-Oxide-Semiconductor Field-Effect Transistors with Nano-Scale Channels Fabricated Using Focused-Ion Beam Implantation
- Novel Nonvolatile Random-Access Memory with Si Nanocrystals for Ultralow-Power Scheme
- Control of Crystal Structure and Ferroelectric Properties of Pb(Zr_xTi_)O_3 Films Formed by Pulsed Laser Deposition
- Pulsed-Laser Induced Desorption in GaAs :A Dynamic Pulse Mass Counting Study
- New Far Infrared Laser Emissions from D_2CO and H_2CO Optically-Pumped by a TECO_2 Laser
- New Laser Emission from NH_3 Optically-Pumped by TE-CO_2 Laser
- Atomic-Scale Characterization of Nitridation Processes on Si(100)-$2\times 1$ Surfaces by Radical Nitrogen
- Application of a Two-Step Growth to the Formation of Epitaxial CoSi2 Films on Si(001) Surfaces: Comparative Study using Reactive Deposition Epitaxy
- Atomic Scale Characterization of Nitridation Process on Si(100)-2x1 Surfaces by Radical Nitrogen