High Quality In_xGa_<1-x>As (x: 0.1-0.13) Platy Crystal Growth for Semiconductor Laser Substrates

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We have succeeded in growing large and high quality platy In_xGa_<1-x>As (x: 0.1-0.13) single crystals by the traveling liquidus.zone (TLZ) method. Among factors which affect crystal quality, the most influential factor is temperature stability at the growth region when the composition of grown crystals is in the range between In_<0.1>Ga_<0.9>As and In_<0.13>Ga_<0.87>As; when the temperature stability was better than ± 0.1℃, compositional uniformity was 0.13 with σ of 0.001 where σ is the standard deviation, and 0.13 with σ of 0.006 when the temperature stability was ±0.2℃. The appropriate temperatures at the feed region were between 1170 and 1180℃. Temperature gradient also affected crystal quality through the variation of growth rate. Temperature gradients chosen for high quality crystal growth were in the range between 25 and 28℃/cm, which were measured outside of quartz ampoules. Finally, In_<0.13>Ga_<0.87>As single crystals having high quality area larger than 10×30mm^2 were reproducibly grown. Such large and high quality bulk single crystals which can be used as substrates of laser diodes operating at the wavelength of 1.3 μm were grown for the first time
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