Detailed Results of This Period : Growth of Homogeneous Si_<0.5>Ge_<0.5> Single Crystals by the Traveling Liquidus-Zone Method (Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs) : Growth of homogeneous cryst

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We have challenged the Si_<0.5>Ge_<0.5> bulk crystals growth. Si-Ge homogeneous single crystals are difficult to grow so far.In the present research, we have applied the Traveling Liquidus-Zone method (TLZ method) which was invented in our group as a new crystal growth method to the growth of Si-Ge. The diameter of grown crystal was 2mm and the length was 15mm. Crystals were well seeded and had the orientation of silicon seeds in spite of the large lattice mismatch. The compositional variation of the crystals was very small and the composition was in the mole fraction range of 0.5±0.016 in germanium. The lattice constant determined by the X-ray powder diffraction was 55.38nm.
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