Noguchi Y | Tohoku Univ. Sendai Jpn
スポンサーリンク
概要
関連著者
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NOGUCHI Yoshio
NTT Opto-electronics Laboratories
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Nakano Yoshinori
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Cororation
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Noguchi Y
Tohoku Univ. Sendai Jpn
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Nagai Haruo
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Cororation
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Nagai Haruo
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Nagai Haruo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephon Public Corporation
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NOGUCHI Yoshio
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Noguchi Yoshio
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Suzuki Yoshio
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Cororation
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SUZUKI Yoshio
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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TAKAHEI Kenichiro
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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IGA Ryuzo
NTT Opto-electronics Laboratories
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Takahei Kenichiro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephon Public Corporation
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KONDO Susumu
NTT Opto-electronics Laboratories
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NAGAI Haruo
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Matsuoka Takashi
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kondo S
Olympus Optical Co. Ltd. Hachioji‐shi Jpn
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Wakita K
Chubu Univ. Aichi Jpn
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Wakita Koichi
With Ntt Opto-electronics Laboratories:chubu University
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NOGUCHI Yoshio
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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SUZUKI Yoshio
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Takahei Kenichiro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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NAGAI Haruo
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Yamada T
Tokyo Inst. Of Technol. Tokyo Jpn
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Yamada T
Tokyo Inst. Technol. Tokyo Jpn
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Yamada T
Daido Inst. Technol. Nagoya Jpn
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Yamada T
Sophia Univ. Tokyo Jpn
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KOTAKA Isamu
NTT Electronics, Corporation
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KOTAKA Isamu
NTT Opto-electronics Laboratories
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Wakita Koichi
NTT Opto-electronics Laboratories
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Yamada T
Tokai Univ. Hiratsuka Jpn
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Nakano Yoshinori
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Nakano Yoshinori
Musashino Electrical Communication Laboratory N.t.t.
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Kotaka Isamu
Ntt Electronics Corporation
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TAKAHEI Ken-ichiro
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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NAWATA Kiyoshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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IWANE Genzo
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Iwane Genzo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Iwane Genzo
Musashino Electrical Communication Laboratory N. T. T.
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Nawata Kiyoshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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YAMADA Takeshi
NTT Opto-electronics Laboratories
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SUGIURA Hideo
NTT Opto-electronics Laboratories
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Sugiura H
Ntt Opti‐electronics Lab. Kanagawa‐ken Jpn
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Takahei Ken-ichiro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Yoshino Kaoru
Ntt Opto-electronics Laboratories
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Yoshino Kaoru
Ntt Photonics Laboratories
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YASAKA Hiroshi
NTT Opto-electronics Laboratories
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Yasaka Hiroshi
Ntt Opto-electornics Laboratories
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WAKITA Koichi
with NTT Opto-electronics Laboratories
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HIRANO Akira
NTT Optical Network System Laboratories
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Kawaguchi Yoshihiro
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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HIRANO Akira
NTT Network Innovation Laboratories, NTT Corporation
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MATSUMOTO Shin-ichi
NTT Opto-electronics Laboratories
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WAKITA Ko-ichi
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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MATSUOKA Takashi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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TOKUNAGA Masato
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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FUJIMOTO Masatomo
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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TOYOSHIMA Yoshio
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Tokunaga Masato
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Fujimoto Masatomo
Musashino Electrical Communication Laboratory
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Wakita Ko-ichi
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Hirano A
Ntt Network Innovation Laboratories Ntt Corporation
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Toyoshima Yoshio
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Yoshino K
Ntt Photonics Laboratories Ntt Corporation
著作論文
- Very-High-Speed and Low Driving-Voltage Modulator Modules for a Short Optical Pulse Generation
- Effect of the Grating Phase at the Cleaved Facet on DFB Laser Properties
- Mode Behavior Improvement in DFB LDs by Light Phase Control at the Facet
- InP/InGaAsP 1.5μm Region Etching Cavity Laser
- Prevention of Surface Corrugation Thermal Deformation for InGaAsP/InP DFB Lasers
- InGaAsP/InP Dual-Wavelength BH Laser
- Abnormality at the Interface of p-Type InP Grown by LPE
- 1.5 μm Region BH Laser Array
- Low Threshold Current CW Operation of InP/GaInAs Buried Heterostrueture Lasers
- 1.5μm InGaAsP/InP BH Lasers on p-Type InP Substrates
- InP/GaInAsP Buried Heterostructure Lasers of 1.5 μm Region
- Low-Threshold InGaAs/ InGaAsP Multiple Quantum Well Lasers Grown by Chemical Beam Epitaxy
- In_Ga_As/InP Mutiquantum Well Lasers Grown by Metalorganic Molecular beam Epitaxy (MOMBE)
- Very-High-Allowability of Incidental Optical Power for Polarization-Insensitive InGaAs/InAlAs Multiple Quantum Well Modulators Buried in Semi-Insulating InP
- Increased Saturation Intensity and High-Input-Power Allowable InGaAs/InAlAs MQW Modulators Buried in Semi-Insulating InP