4×4 Surface-Emitting 1.55 μm InGaAsP/InP Laser Arrays with Microcoated Reflectors Fabricated by Reactive Ion Etching
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概要
- 論文の詳細を見る
4×4 surface-emitting 1.55 μm InGaAsP/InP laser arrays with microcoated reflectors are fabricated. These surface emitting laser arrays can be operated in the CW condition at 20℃ and driven independently. The average CW threshold current of these lasers is about 55 mA and the average maximum otutput power is alvout 4 mW at 20℃. Using this 4×4 surface-emitting laser array, simple letters can be rendered by brightened dots. The laser wafer has a buried-heterostructure (BH) fabricated by all MOCVD (Metal Organic Vapor Deposition) and dry etching. The etched vertical laser facets and the inclined reflectors are fabricated simultaneously by inclined RIE using Cl_2 gas, a TiO_2 mask, and a 50 degree stainless steel sample holder. A microcoating process for the inclined reflectors and the back laser facets that achieves high reflectivity has also been developed.
- 社団法人応用物理学会の論文
- 1991-04-01
著者
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KONDO Yasuhiro
NTT Opto-electronics Laboratories
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Saito H
Nec Corp. Ibaraki Jpn
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SAITO Hideho
NTT Opto-electronics Laboratories, Nippon Telegraph and Telephone Corporation
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Saito Hideho
Ntt Opto-electronics Laboratories
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