A Reflection-Type Surface-Emitting 1.3 μm InGaAsP/InP Laser Array with Microcoated Reflector
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概要
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A reflection-type surface-emitting 1.3 μm InGaAsP/InP laser with a microcoated reflector is successfully fabricated by inclined reactive ion-etching (RIF) utilizing a TiO_2 mask and Cl_2-Ar gas. The typical CW threshold current is 30 mA at room temperature, and the CW surface-emitting light power exceeds 18 mW. A one-dimensional surface emitting laser array is also fabricated.
- 社団法人応用物理学会の論文
- 1989-07-20
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