Simultaneous Time- and Wavelength-Division Optical Digital Processing with a InP Buried Side-Injection-Light-Controlled Bistable Laser Diode
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概要
- 論文の詳細を見る
An InP-buried side-injection-light-controlled bistable laser diode (SILC-BLD) has been fabricated for digital optical processing. Signal-regenerating wavelength conversion and optical demultiplexing for non-return-to-zero (NRZ) optical signals are simultaneously demonstrated with the module, which has integrated functions for gating input signals, digital regeneration, and bit memory characteristics.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-07-15
著者
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NOGUCHI Yoshio
NTT Opto-electronics Laboratories
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KUROKAWA Takashi
NTT Opto-electronics Laboratories
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NONAKA Koji
NTT Opto-electronics Laboratories
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Kurokawa Takashi
NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan
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Noguchi Yoshio
NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan
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Nonaka Koji
NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan
関連論文
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- Operation Characteristics of a Side-Light-Injection Multiple-Quantum-Well Bistable Laser for All-Optical Switching
- Pigtailed Compact Tunable Wavelength-Selective Filter Using a Liquid Crystal for Wavelength-Division-Multiplexing Systems
- 1.3-μm Surface-Normal Reflective Optical Modulators Based on the Wannier-Stark Effect in InP/InGaAsP Superlattices
- Using Carbon Tetrachloride for Carbon Doping Al_xGa_AS Grown by Metalorganic Chemical Vapor Deposition
- Effect of the Grating Phase at the Cleaved Facet on DFB Laser Properties
- Mode Behavior Improvement in DFB LDs by Light Phase Control at the Facet
- InP/InGaAsP 1.5μm Region Etching Cavity Laser
- Prevention of Surface Corrugation Thermal Deformation for InGaAsP/InP DFB Lasers
- InGaAsP/InP Dual-Wavelength BH Laser
- Abnormality at the Interface of p-Type InP Grown by LPE
- 1.5 μm Region BH Laser Array
- Low Threshold Current CW Operation of InP/GaInAs Buried Heterostrueture Lasers
- 1.5μm InGaAsP/InP BH Lasers on p-Type InP Substrates
- InP/GaInAsP Buried Heterostructure Lasers of 1.5 μm Region
- Polarization-Independent Tunable Liquid-Crystal Fabry-Perot Interferometer Filters
- Electrical Evaluation of Sidewall Damage Caused by CH_4/H_2 Reactive Ion Etching
- Low-Threshold InGaAs/ InGaAsP Multiple Quantum Well Lasers Grown by Chemical Beam Epitaxy
- In_Ga_As/InP Mutiquantum Well Lasers Grown by Metalorganic Molecular beam Epitaxy (MOMBE)
- 0.85-μm Vertical-Cavity Surface-Emitting Laser Array Grown on GaAs and AlGaAs Substrates by Metal Organic Chemical Vapor Deposition
- Spatial Light Modulators Using Super Twisted Nematic Liquid Crystals and Application to Projection Display
- Digitally Signal-Regenerating Optical-Fiber Loop Memory with Side-Injection-Light-Controlled Bistable Laser Diode
- Very-High-Allowability of Incidental Optical Power for Polarization-Insensitive InGaAs/InAlAs Multiple Quantum Well Modulators Buried in Semi-Insulating InP
- Increased Saturation Intensity and High-Input-Power Allowable InGaAs/InAlAs MQW Modulators Buried in Semi-Insulating InP
- Coupling Efficierucies between Laser Diodes and Photo Diodes of InGaAsP/InP LD-PD Devices with Inclined PD Facets Considering PD Absorption
- Diffraction Characteristics of Ferroelectric Liquid Crystal Grating
- Improvement of the Transmission Spectra of Tunable Wavelength-Selective Liquid Crystal Fabry-Perot Interferometer Filters
- A Reflection-Type Surface-Emitting 1.3 μm InGaAsP/InP Laser Array with Microcoated Reflector
- Reliable Addressing Scheme With Robust Synchronization Feature for Wobble-Groove Recording
- Simultaneous Time- and Wavelength-Division Optical Digital Processing with a InP Buried Side-Injection-Light-Controlled Bistable Laser Diode
- Very-High-Allowability of Incidental Optical Power for Polarization-Insensitive InGaAs/InAlAs Multiple Quantum Well Modulators Buried in Semi-Insulating InP
- InGaAsP/InP Etched Mirror Lasers Fabricated by Inclined RIE