InGaAsP/InP Etched Mirror Lasers Fabricated by Inclined RIE
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概要
- 論文の詳細を見る
The results of an etching study on InP crystal by inclined RIE, using TiO2 mask and Cl2–Ar mixture gas, are described. Fabrication of vertical etched facets for lasers and the origins of a fine striation pattern on the vertical etched facet are investigated. Influences on the facet reflectivity of the etched mirror lasers by the facet roughness and inclination are discussed both theoretically and experimentally. InGaAsP/InP lasers with both facets etched were fabricated by inclined RIE. Typical CW threshold currents of these etched-mirror lasers range from 20 to 30 mA at 25°C and the light-output power from one facet exceeds 25 mW. Results of the 6050-h aging test at 50°C and about 5 mW show that InGaAsP/InP etched-mirror lasers can be excepted to be highly reliable.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-10-20
著者
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NOGUCHI Yoshio
NTT Opto-electronics Laboratories
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Saito Hideho
Ntt Opto-electronics Laboratories
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Saito Hideho
NTT Opto-Electronics Laboratories Nippon Telegraph and Telephone Corporation, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01
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