Coupling Efficierucies between Laser Diodes and Photo Diodes of InGaAsP/InP LD-PD Devices with Inclined PD Facets Considering PD Absorption
スポンサーリンク
概要
- 論文の詳細を見る
Coupling effiniencies between LDs (laser diodes) and PDs (photo diodes) of InGaAsP/InP LD-PD (laser diode with photo diode) devices with 30-35° inclined PD facets are calculated and compared with experimental results. The calculations are carried out by developing an electric field with the phase difference caused by the inclined PD facet to the sum of the higher order Hermite-Gaussian beams, considering up to the 15-th order mode, and taking into account PD active layer absorption by calculating confinement factors and intensities of Hermite-Gaussian beams spreading and decreasing in PD crystal. The experimental coupling efficiencies of the LD-PD devices with 30-35° inclined PD facets agree with the calculated results, using the PD active layer absorption coefficient for band edge emitting light of 850 cm^<-1>. This absorption coefficient value corresponds to the experiment value derived from the PD length dependence of the PD photocurrent. The calculations can be used for the design of the LD-PD devices with the inclined PD facets.
- 社団法人応用物理学会の論文
- 1993-02-15
著者
-
NOGUCHI Yoshio
NTT Opto-electronics Laboratories
-
Saito H
Nec Corp. Ibaraki Jpn
-
SAITO Hideho
NTT Opto-electronics Laboratories, Nippon Telegraph and Telephone Corporation
-
Noguchi Yoshio
Ntt Opto-electronics Laboratories Nippon Telegraph And Telephone Corporation
-
Saito Hideho
Ntt Opto-electronics Laboratories
関連論文
- Very-High-Speed and Low Driving-Voltage Modulator Modules for a Short Optical Pulse Generation
- Thermal Analysis of Laser-Emission Surface-Normal Optical Devices with a Vertical Cavity
- Molecular Beam Epitaxially Grown ZnSe(001) Surface Studied by the In Situ Observation of RHEED Intensity
- Effect of Residual Strain on the Splitting of Excitonic Luminescence Lines in Epitaxially Grown ZnSe/GaAs
- Photoquenching and Recovery Effects of EL2 Absorption in GaAs : Optical Properties of Condensed Matter
- Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
- Nitrogen Atomic-Layer-Doping on Ga-Terminated and Misoriented GaAs Surfaces by Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine
- Analysis of the Thickness Edge Mode in Piezoelectric Plates and Its Application to Resonators
- Effect of the Grating Phase at the Cleaved Facet on DFB Laser Properties
- Mode Behavior Improvement in DFB LDs by Light Phase Control at the Facet
- InP/InGaAsP 1.5μm Region Etching Cavity Laser
- Prevention of Surface Corrugation Thermal Deformation for InGaAsP/InP DFB Lasers
- InGaAsP/InP Dual-Wavelength BH Laser
- Abnormality at the Interface of p-Type InP Grown by LPE
- 1.5 μm Region BH Laser Array
- Low Threshold Current CW Operation of InP/GaInAs Buried Heterostrueture Lasers
- 1.5μm InGaAsP/InP BH Lasers on p-Type InP Substrates
- InP/GaInAsP Buried Heterostructure Lasers of 1.5 μm Region
- Pixels Consisting of Double Vertical-Cavity Detector and Single Vertical-Cavity Laser Sections for 2-D Bidirectional Optical Interconnections
- Arsenic Coverages and Surface Structures of As-Stabilized GaAs (001) Surfaces during Metalorganic Chemical Vapor Deposition Observed by Reflectance Difference
- GaAs Quantum-Wire Laser Using Fractional Layer Superlattice
- Dielectric Properties of Rare-Earth-Oxide-Doped BaTiO_3 Ceramics Fired in Reducing Atmosphere ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Properties of Y5V Multilayer Ceramic Capacitors with Nickel Electrodes
- Low Temperature Growth of ZnSe/GaAs Using Post-Heated Molecular Beams
- Electrical Evaluation of Sidewall Damage Caused by CH_4/H_2 Reactive Ion Etching
- Optimum Electrode Design for Effective Excitation of the Edge Mode by Taking Account of Its Electric Potential Distribution : SAW and Communication Device
- Low-Threshold InGaAs/ InGaAsP Multiple Quantum Well Lasers Grown by Chemical Beam Epitaxy
- In_Ga_As/InP Mutiquantum Well Lasers Grown by Metalorganic Molecular beam Epitaxy (MOMBE)
- Very-High-Allowability of Incidental Optical Power for Polarization-Insensitive InGaAs/InAlAs Multiple Quantum Well Modulators Buried in Semi-Insulating InP
- Increased Saturation Intensity and High-Input-Power Allowable InGaAs/InAlAs MQW Modulators Buried in Semi-Insulating InP
- Characterization of a Longitudinally Pumped CW, Room-Temperature Operation of Tm^:YVO_4 Laser
- Effects of Spectral Broadening and Cross Relaxation on the Gain Saturation Characteristics of Quantum Dot Laser Amplifiers
- Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
- Coupling Efficierucies between Laser Diodes and Photo Diodes of InGaAsP/InP LD-PD Devices with Inclined PD Facets Considering PD Absorption
- 4×4 Surface-Emitting 1.55 μm InGaAsP/InP Laser Arrays with Microcoated Reflectors Fabricated by Reactive Ion Etching
- A Reflection-Type Surface-Emitting 1.3 μm InGaAsP/InP Laser Array with Microcoated Reflector
- Simultaneous Time- and Wavelength-Division Optical Digital Processing with a InP Buried Side-Injection-Light-Controlled Bistable Laser Diode
- Very-High-Allowability of Incidental Optical Power for Polarization-Insensitive InGaAs/InAlAs Multiple Quantum Well Modulators Buried in Semi-Insulating InP
- InGaAsP/InP Etched Mirror Lasers Fabricated by Inclined RIE