Self-Organizing Semiconductor Epitaxial Films by Turing Instability
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概要
- 論文の詳細を見る
We describe for the first time diagrams of the surface topography domain in a strained InGaAs/AlGaAs system grown on GaAs (311)B/A surfaces during metalorganic-vapor-phase-epitaxial growth. The surface rearrangement process resulting in the stationary pattern formation of the various quasi-periodic nanostructures seems to belong to the class of a Turing-type self-organization phenomenon in non-linear dynamic systems. Experimental results might indicate the existence of a novel fourth growth mode due to Turing-type self-organization in addition to the three well-known epitaxial growth modes.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1998-03-30
著者
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TEMMYO Jiro
NTT Opto-electronics Laboratories
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Tamamura Toshiaki
Ntt Opto-electronics Laboratories
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Temmyo Jiro
NTT Opto-electronics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
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Tamamura Toshiaki
NTT Opto-electronics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
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