Photon Stimulated Desorption of CO from Si Single Crystal
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概要
- 論文の詳細を見る
Photon-stimulated desorption (PSD) of CO from Si single crystal is studied carefully by the throughput method. The photodesorption yield of Si single crystal is lower than that of OFHC copper. To investigate the effect of impurities in Si, stable isotope ^<13>C is chosen as an impurity. ^<13>CO is hardly detected in the outgas due to PSD from ^<13>C-implanted, Si single crystal. It is concluded that carbon in Si single crystal is not desorbed in the PSD process.
- 社団法人応用物理学会の論文
- 1990-01-20
著者
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YOSHIHARA Hideo
NTT LSI Laboratories
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Kobayashi M
Mitsubishi Electric Corp. Hyogo Jpn
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KOBAYASHI Masanori
Photon Factory, National Laboratory for High Energy Physics
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Yoshihara H
Ntt Advanced Technol. Corp. Kanagawa Jpn
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Yoshihara H
Kanagawa Univ. Yokohama Jpn
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MURASHITA Toru
NTT LSI Laboratories
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KANEKO Takashi
NTT LSI Laboratories
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Kaneko T
Department Of Periodontology Nagasaki University School Of Dentistry
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Kobayashi Masanori
Photon Factory National Laboratory For High Energy Physics
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