Low-Temperature Si Surface Cleaning by Hydrogen Beam with Electron-Cyclotron-Resonance Plasma Excitation
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概要
- 論文の詳細を見る
Si surface cleaning is successfully carried out at as low as 400℃ using hydrogen ECR plasma. SIMS analysis reveals no detectable accumulation of either carbon or oxygen at the grown-layer/Si interface. Hydrogen plasma cleaning is found equally effective for unbiased and positively biased Si substrates. On the other hand, helium plasma is not as effective as hydrogen plasma for cleaning. These results imply that the major mechanism inavolved in the plasma cleaning is chemical reaction between silicon oxide and chemically active hydrogen radicals, rather than physical bombardment by hydrogen ions.
- 社団法人応用物理学会の論文
- 1990-07-20
著者
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Fujimoto Masahiro
Faculty Of Engineering Hiroshima University
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Fujimoto M
Taiyo Yuden Co. Ltd.
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SHIBATA Tomohiro
NTT Opto-electronics Laboratories
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NANISHI Yasushi
NTT Opto-electronics Laboratories
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FUJIMOTO Masatomo
NTT Opto-electronics Laboratories
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Shibata T
Department Of Electronics Nagoya University
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Nanishi Y
Ntt Opto-electronics Laboratories
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Nanishi Yasushi
Technical Research Laboratory Kansai Paint Co. Ltd.
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