Wet etching of N- and In- Polar InN
スポンサーリンク
概要
著者
-
Nanishi Y
Ntt Opto-electronics Laboratories
-
Nanishi Yasushi
Technical Research Laboratory Kansai Paint Co. Ltd.
-
Araki Tsutomu
Department Of Photonics Ritsumeikan University
-
Muto Daisuke
Department Of Photonics Ritsumeikan University
-
Naoi Hiroyuki
Center For Promotion Of The Coe Program Ritsumeikan University
-
Araki Tsutomu
Department Of Systems And Human Science Graduate School Of Engineering Science Osaka University
関連論文
- A Rutherford Backscattering Spectroscopic Study of the Aluminum Antimonide Oxidation Process in Air
- Effects of Traps Formed by Threading Dislocations on Off-State Breakdown Characteristics in GaN Buffer Layer in AlGaN/GaN Heterostructure Field-Effect Transistors
- Growth of Hlgh-Electron-Mobility InN by RF Molecular Beam Epitaxy : Semiconductors
- Polarity Determination of InN by Atomic Hydrogen Irradiation
- Wet etching of N- and In- Polar InN
- Structural and Optical Properties of Polycrystalline InN Grown on Silica Glass by ECR-MBE
- Synthesis of Optically Active Mandelic Acid via Microbial Oxidation of Racemic 1-Phenyl-1,2-ethanediol
- Low-Temperature Si Surface Cleaning by Hydrogen Beam with Electron-Cyclotron-Resonance Plasma Excitation
- Phase-Modulation Fluorometer Using an Ultraviolet Light-Emitting Diode
- A Simple Frequency Lock of Green YAG Laser to Dispersion Line of the linear Absorption Spectrum of Iodine Molecules Utilizing an Acousto-Optic Frequency Shifter
- Fabrication and Characterization of InN-Based Quantum Well Structures Grown by Radio-Frequency Plasma-Assisted Molecular-Beam Epitaxy