Bombardment Damage in Reactively-Evaporated a-Si:H
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-08-20
著者
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Myokan Isao
New Materials R&d Laboratries Konishiroku Photo. Ind. Co. Ltd.
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Myokan Isao
New Materials R&d Laboratories Konishiroku Photo Ind. Co. Ltd.
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SHINDO Masanari
Nippon Schlumberger K. K.
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SATO Shigeru
Nippon Schlumberger K. K.
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MANO Shigeru
New Materials R & D Laboratories Konishiroku Photo Ind. Co. Ltd.
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SHIBATA Takuji
New Materials R & D Laboratories Konishiroku Photo Ind. Co. Ltd.
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Mano Shigeru
New Materials R&d Laboratries Konishiroku Photo. Ind. Co. Ltd.
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Shibata T
Department Of Electronics Nagoya University
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Shindo M
Sci. Univ. Tokyo Tokyo Jpn
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Shindo Masanari
Electrotechnical Laboratory:konishiroku Photo Ind. Co. Ltd.
関連論文
- Bombardment Damage in Reactively-Evaporated a-Si:H
- Preparation Capacity of Reactive Evaporation Method for Amorphous Silicon
- High Rate Preparation of a-Si:H by Reactive Evaporation Method
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- A New Method for Measuring Secondary Electron Emission Yield from Nd Surface Bombarded by Ions from a Laser-Ion Source
- Time-Resolved Electron Energy Analyzer
- Low-Temperature Si Surface Cleaning by Hydrogen Beam with Electron-Cyclotron-Resonance Plasma Excitation
- Characterization of Gadolinium Plasma in Gadolinium Vapor at High-Rate Evaporation by Electron Beam Heating