Low-Temperature Surface Cleaning of GaAs by Electron Cyclotron Resonance (ECR) Plasma
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-01-20
著者
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Kondo Naoto
Ntt Opto-electronics Laboratories
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Kondo Naoto
Ntt Opto-electronics Labotarories
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NANISHI Yasushi
NTT Opto-electronics Laboratories
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Nanishi Yasushi
Ntt Opto-electronics Labotarories
関連論文
- A Rutherford Backscattering Spectroscopic Study of the Aluminum Antimonide Oxidation Process in Air
- Direct Growth of AlGaAs/GaAs Single Quantum Wells on GaAs Substrates Cleaned by Electron Cyclotron Resonance (ECR) Hydrogen Plasma
- Low-Temperature Surface Cleaning of GaAs by Electron Cyclotron Resonance (ECR) Plasma
- Surface Cleaning of AlGaAs Substrates by Hydrogen Electron Cyclotron Resonance (ECR) Plasma
- Low-Temperature Si Surface Cleaning by Hydrogen Beam with Electron-Cyclotron-Resonance Plasma Excitation
- Electrical Properties of AlGaAs/GaAs Two-Dimensional Electron Gases (2DEGs) Grown on GaAs Substrates Cleaned by an Electron Cyclotron Resonance (ECR) Hydrogen Plasma