Plasma Instability and Nonlinear Terahertz Oscillations in Resonant-Tunneling Structures
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-02-01
著者
-
RYZHII Victor
Computational Nanoelectronics Laboratory, University of Aizu
-
SHUR Michael
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute
関連論文
- Terahertz Laser with Optically Pumped Graphene Layers and Fabri-Perot Resonator
- Device Model for Graphene Nanoribbon Phototransistor
- Tunneling Current-Voltage Characteristics of Graphene Field-Effect Transistor
- Resonant Terahertz Detection Based on High-electron-mobility Transistor with Schottky Source/Drain Contact
- Electric-Field Breakdown of Absolute Negative Conductivity and Supersonic Streams in Two-Dimensional Electron Systems with Zero Resistance/Conductance States
- Plasma Instability and Terahertz Generation in HEMTs Due to Electron Transit-Time Effect(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Resonant Detection and Frequency Multiplication in Barrier-Injection Heterostructure Transistors
- Analysis of Tunneling-Injection Transit-Time Effects and Self-Excitation of Terahertz Plaslma Oscillations in High-Electron-Mobility Transistors : Semiconductors
- Analysis of the Photocurrent in Quantum Dot Infrared Photodetectors : Semiconductors
- Graphene Tunneling Transit-Time Terahertz Oscillator Based on Electrically Induced p-i-n Junction
- Resonant terahertz photomixing in integrated HEMT-QWIP device
- Dark Current in Quantum Dot Infrared Photodetectors
- Nonlinear Dynamics of Periodic Electric-Field Domains in Quantum Well Infrared Photodetectors
- Theoretical Study of Recharging Instability in Quantum Well Infrared Photodetectors
- Effect of Donor Space Charge on Electron Capture Processes in Quantum Well Infrared Photodetectors
- Recharging Instability and Periodic Domain Structures in Multiple Quantum Well Infrared Photodetectors
- High-Frequency Response of Metal-Semiconductor-Metal Photodetectors Limited by Dynamic and Recombination Effects
- Influence of Electron Velocity Overshoot Effect on High-Frequency Characteristics of Quantum Well Infrared Photodetectors
- Optically Controlled Plasma Resonances in Induced-Base Hot-Electron Transistors
- High-Frequency Response of Intersubband Infrared Photodetectors with a Multiple Quantum Well Structure
- Resonant-Tunneling Bipolar Transistors with a Quantum-Well Base
- Modeling of Lateral Hot-Electron Phototransistor for Long-Wave Length Infrared Radiation
- Quantum Well Infrared Photodetector with Optical Output
- Injection and Population Inversion in Electrically Induced p-n Junction in Graphene with Split Gates
- High-Frequency Characteristics of Quantum Well Infrared Photodetectors with Blocking Barrier
- Plasma Instability and Nonlinear Terahertz Oscillations in Resonant-Tunneling Structures
- Resonant Terahertz Detector Utilizing Plasma Oscillations in Two-Dimensional Electron System with Lateral Schottky Junction
- Nonlocal Hot-Electron Transport and Capture Model for Multiple Quantum Well Structures Excited by Infrared Radiation
- Unipolar Darlington Infrared Phototransistor
- Coherent and tunable terahertz emission from nano-metric field effect transistor at room temperature (電子デバイス)