Resonant Terahertz Detector Utilizing Plasma Oscillations in Two-Dimensional Electron System with Lateral Schottky Junction
スポンサーリンク
概要
- 論文の詳細を見る
We propose a novel resonant detector of terahertz radiation based on a heterostructure with an ungated two-dimensional electron channel, with a lateral Schottky junction at one of the channel edges, substantiate its operation, and evaluate the device characteristics. We demonstrate that the detector responsivity can exhibit sharp resonant maxima at the frequencies pertaining to the plasma oscillations. As shown, the peak values of the responsivity of the detector proposed can exceed the responsivity of the standard Schottky detectors by several orders of magnitude if the electron mobility in the channel is sufficiently high.
- 2006-11-25
著者
-
Ryzhii Victor
Computational Nanoelectronics Laboratory University Of Aizu
-
Shur Michael
Department Of Electrical Computer And System Engineering Rensselaer Polytechnic Institute
-
Ryzhii Victor
Computer Solid State Physics Laboratory, University of Aizu, Aizu-Wakamatsu, Fukushima 965-8580, Japan
-
Shur Michael
Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.
-
Ryzhii Victor
Computational Nano-Electronics Laboratory, University of Aizu, Aizuwakamatsu, Fukushima 965-8580, Japan
関連論文
- Terahertz Laser with Optically Pumped Graphene Layers and Fabri-Perot Resonator
- Device Model for Graphene Nanoribbon Phototransistor
- Tunneling Current-Voltage Characteristics of Graphene Field-Effect Transistor
- Resonant Terahertz Detection Based on High-electron-mobility Transistor with Schottky Source/Drain Contact
- Electric-Field Breakdown of Absolute Negative Conductivity and Supersonic Streams in Two-Dimensional Electron Systems with Zero Resistance/Conductance States
- Plasma Instability and Terahertz Generation in HEMTs Due to Electron Transit-Time Effect(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Resonant Detection and Frequency Multiplication in Barrier-Injection Heterostructure Transistors
- Analysis of Tunneling-Injection Transit-Time Effects and Self-Excitation of Terahertz Plaslma Oscillations in High-Electron-Mobility Transistors : Semiconductors
- Analysis of the Photocurrent in Quantum Dot Infrared Photodetectors : Semiconductors
- Graphene Tunneling Transit-Time Terahertz Oscillator Based on Electrically Induced p-i-n Junction
- Resonant Terahertz Photomixing in Integrated High-Electron-Mobility Transistor and Quantum-Well Infrared Photodetector Device (Special Issue: Solid State Devices & Materials)
- Resonant terahertz photomixing in integrated HEMT-QWIP device
- Dark Current in Quantum Dot Infrared Photodetectors
- Nonlinear Dynamics of Periodic Electric-Field Domains in Quantum Well Infrared Photodetectors
- Theoretical Study of Recharging Instability in Quantum Well Infrared Photodetectors
- Effect of Donor Space Charge on Electron Capture Processes in Quantum Well Infrared Photodetectors
- Recharging Instability and Periodic Domain Structures in Multiple Quantum Well Infrared Photodetectors
- High-Frequency Response of Metal-Semiconductor-Metal Photodetectors Limited by Dynamic and Recombination Effects
- Influence of Electron Velocity Overshoot Effect on High-Frequency Characteristics of Quantum Well Infrared Photodetectors
- Optically Controlled Plasma Resonances in Induced-Base Hot-Electron Transistors
- High-Frequency Response of Intersubband Infrared Photodetectors with a Multiple Quantum Well Structure
- Resonant-Tunneling Bipolar Transistors with a Quantum-Well Base
- Modeling of Lateral Hot-Electron Phototransistor for Long-Wave Length Infrared Radiation
- Quantum Well Infrared Photodetector with Optical Output
- Injection and Population Inversion in Electrically Induced p-n Junction in Graphene with Split Gates
- Theoretical study of population inversion in graphene under pulse excitation (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Graphene Nanoribbon Phototransistor: Proposal and Analysis
- Effect of Photon Recycling in Pixelless Imaging Device
- Effect of Heating and Cooling of Photogenerated Electron--Hole Plasma in Optically Pumped Graphene on Population Inversion
- Terahertz Amplifiers based on Multiple Graphene Layer with Field-Enhancement Effect
- Characteristics of p--i--n Terahertz and Infrared Photodiodes Based on Multiple Graphene Layer Structures
- Theoretical Study of Population Inversion in Graphene under Pulse Excitation
- Resonant Terahertz Detector Utilizing Plasma Oscillations in Two-Dimensional Electron System with Lateral Schottky Junction
- Coherent and tunable terahertz emission from nano-metric field effect transistor at room temperature (電子デバイス)
- Detection of Modulated Terahertz Radiation Using Combined Plasma and Mechanical Resonances in Double-Carbon-Nanotube Device
- AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
- AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
- Low Frequency Noise in Insulated-Gate Strained-Si n-Channel Modulation Doped Field Effect Transistors
- Resonant Terahertz Photomixing in Integrated High-Electron-Mobility Transistor and Quantum-Well Infrared Photodetector Device
- High-Frequency Characteristics of Quantum Well Infrared Photodetectors with Blocking Barrier
- Terahertz Plasma Waves in Gated Graphene Heterostructures
- Nonlocal Hot-Electron Transport and Capture Model for Multiple Quantum Well Structures Excited by Infrared Radiation
- Microwave-Induced Suppression of Dissipative Conductivity and Its Shubnikov–de Haas Oscillations in Two-Dimensional Electron Systems: Effects of Dynamic Electron Localization and Plasma Reflection
- Plasma Instability and Nonlinear Terahertz Oscillations in Resonant-Tunneling Structures