Low Frequency Noise in Insulated-Gate Strained-Si n-Channel Modulation Doped Field Effect Transistors

概要

論文の詳細を見る
The $1/ f$ noise in insulated gate strained Si n-channel modulation doped field effect transistors (MOSMODFETs) and in control Si metal–oxide–semiconductor FETs (MOSFETs) has been studied at gate voltages below and above the threshold. All transistors have a deposited gate oxide of 20 nm and gate length of 0.5 μm. Mobilities extracted from the capacitance– and current–voltage characteristics were found between 580–700 cm2 V-1 s-1 for the MOSMODFETs, and between 300–400 cm2 V-1 s-1 for the Si MOSFETs. In spite of the difference in the mobility both FETs demonstrated identical noise characteristics. The $1/ f$ noise was found well described by the model of number of carriers fluctuations equally below and above threshold. The effective density of traps is ${\sim}5\times 10^{10}$ eV-1 cm-2 responsible for the noise was within the usual range reported before for regular n-channel Si MOSFETs and somewhat higher than for p-SiGe MODFETs.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2007-07-15