Fast Deposition Process for Graded SiGe Buffer Layers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-30
著者
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Kanel Hans
Laboratorium fur Festkorperphysik
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Von Kanel
Laboratorium Fur Festkorperphysik Eth Zurich
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ROSENBLAD Carsten
Laboratorium fur Festkorperphysik, ETH Zurich
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KUMMER Matthias
Laboratorium fur Festkorperphysik, ETH Zurich
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MULLER Elisabeth
Laboratorium fur Mikro-und Nanostructuren, PSI
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GRAF Thomas
Laboratorium fur Festkorperphysik, ETH Zurich
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HACKBARTH Thomas
DaimlerChrysler AG, Research and Technology
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Graf Thomas
Laboratorium Fur Festkorperphysik Eth Zurich
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Kummer Matthias
Laboratorium Fur Festkorperphysik Eth Zurich:interstaatliche Fachhochschule Fur Technik Buchs
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Rosenblad Carsten
Laboratorium Fur Festkorperphysik Eth Zurich
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Muller Elisabeth
Laboratorium Fur Mikro-und Nanostructuren Psi
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Hackbarth Thomas
Daimlerchrysler Ag Research And Technology
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KANEL Hans
Laboratorium fur Festkorperphysik, ETH Zurich
関連論文
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- Fast Deposition Process for Graded SiGe Buffer Layers
- Fast Deposition Process for Graded SiGe Buffer Layers
- Low Frequency Noise in Insulated-Gate Strained-Si n-Channel Modulation Doped Field Effect Transistors
- Sub-100 nm Gate Technologies for Si/SiGe-Buried-Channel RF Devices
- Fast Deposition Process for Graded SiGe Buffer Layers
- Sub-100 nm Gate Technologies for Si/SiGe-Buried-Channel RF Devices