Ballistic-Electron-Emission Microscopy on Epitaxial Silicides
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-06-30
著者
-
Meyer Thomas
Laboratorium Fur Festkorperphysik
-
Meyer Thomas
Laboratorium Fur Festkorperphysik Eth Zurich
-
VON KANEL
Laboratorium fur Festkorperphysik, ETH Zurich
-
KLEMENC Michaela
Laboratorium fur Festkorperphysik, ETH Zurich
-
Kanel Hans
Laboratorium fur Festkorperphysik
-
Von Kanel
Laboratorium Fur Festkorperphysik Eth Zurich
-
Klemenc Michaela
Laboratorium Fur Festkorperphysik Eth Zurich
関連論文
- Ballistic-Electron-Emission Microscopy on Epitaxial Silicides
- Ballistic-Electron-Emission Microscopy at Epitaxial Metal/Semiconductor Interfaces(STM-BEEM interfaces)
- Fast Deposition Process for Graded SiGe Buffer Layers
- Fast Deposition Process for Graded SiGe Buffer Layers
- Sub-100 nm Gate Technologies for Si/SiGe-Buried-Channel RF Devices
- Fast Deposition Process for Graded SiGe Buffer Layers
- Sub-100 nm Gate Technologies for Si/SiGe-Buried-Channel RF Devices