Hackbarth Thomas | Daimler-Chrysler AG, Research Center Ulm, Wilhelm-Runge-St. 11, 89081 Ulm, Germany
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- 同名の論文著者
- Daimler-Chrysler AG, Research Center Ulm, Wilhelm-Runge-St. 11, 89081 Ulm, Germanyの論文著者
関連著者
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Hackbarth Thomas
Daimler-Chrysler AG, Research Center Ulm, Wilhelm-Runge-St. 11, 89081 Ulm, Germany
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Kanel Hans
Laboratorium fur Festkorperphysik
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Hackbarth Thomas
Daimlerchrysler Ag Research And Technology
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Zeuner Marco
Daimlerchrysler Ag Research And Technology
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Enciso-Aguilar Mauro
Institut d'Electronique Fondamentale, Paris-Sud University, 91405 Orsay, France
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Aniel Frederic
Institut d'Electronique Fondamentale, Paris-Sud University, 91405 Orsay, France
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Shur Michael
Department Of Electrical Computer And System Engineering Rensselaer Polytechnic Institute
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Kummer Matthias
Laboratorium Fur Festkorperphysik Eth Zurich:interstaatliche Fachhochschule Fur Technik Buchs
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Rosenblad Carsten
Laboratorium Fur Festkorperphysik Eth Zurich
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Muller Elisabeth
Laboratorium Fur Mikro-und Nanostructuren Psi
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Fobelets Kristel
Department of Electrical and Electronic Engineering, Imperial College London, Exhibition Road, London SW7 2BT, U.K.
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Rumyantsev Sergey
Department of Electrical, Computer, and Systems Engineering, CII 9017, Rensselaer Polytechnic Institute, Troy, NY 12180-3590, U.S.A.
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Aniel Frederic
Institut d'Electronique Fondamentale, Paris-Sud University, 91405 Orsay, France
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Shur Michael
Department of Electrical, Computer, and Systems Engineering, CII 9017, Rensselaer Polytechnic Institute, Troy, NY 12180-3590, U.S.A.
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Zeuner Marco
DaimlerChrysler AG, Research and Technology, 89081 Ulm, Germany
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Graf Thomas
Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zürich, Switzerland
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Rosenblad Carsten
Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zürich, Switzerland
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Kummer Matthias
Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zürich, Switzerland
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Hackbarth Thomas
DaimlerChrysler AG, Research and Technology, Wilhelm-Runge-St. 11, D-89081 Ulm, Germany
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Hackbarth Thomas
DaimlerChrysler AG, Research and Technology, 89081 Ulm, Germany
著作論文
- Low Frequency Noise in Insulated-Gate Strained-Si n-Channel Modulation Doped Field Effect Transistors
- Sub-100 nm Gate Technologies for Si/SiGe-Buried-Channel RF Devices
- Fast Deposition Process for Graded SiGe Buffer Layers
- Sub-100 nm Gate Technologies for Si/SiGe-Buried-Channel RF Devices