AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

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概要

• 論文の詳細を見る
• 2012-08-25

著者

• LUNEV Alex

  Sensor Electronic Technology, Inc.

• HU Xuhong

  Sensor Electronic Technology, Inc.

• Gaska Remis

  Sensor Electronic Technology Inc.

• SHATALOV Max

  Sensor Electronic Technology, Inc.

• SUN Wenhong

  Sensor Electronic Technology, Inc.

• BILENKO Yuri

  Sensor Electronic Technology, Inc.

• YANG Jinwei

  Sensor Electronic Technology, Inc.

• Hu Xuhong

  Sensor Electronic Technology Inc.

• Shur Michael

  Department Of Electrical Computer And System Engineering Rensselaer Polytechnic Institute

• Lunev Alex

  Sensor Electronic Technology Inc.

• DOBRINSKY Alex

  Sensor Electronic Technology, Inc.

• MOE Craig

  U. S. Army Research Laboratory

• GARRETT Gregory

  U. S. Army Research Laboratory

• WRABACK Michael

  U. S. Army Research Laboratory

• GASKA Remis

  Sensor Electronic Technology, Inc.

関連論文

• Resonant Terahertz Detection Based on High-electron-mobility Transistor with Schottky Source/Drain Contact
• AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor : Semiconductors
• Plasma Instability and Terahertz Generation in HEMTs Due to Electron Transit-Time Effect(THz Devices,Heterostructure Microelectronics with TWHM2005)
• Analysis of Tunneling-Injection Transit-Time Effects and Self-Excitation of Terahertz Plaslma Oscillations in High-Electron-Mobility Transistors : Semiconductors
• 10Milliwatt Pulse Operation of 265nm AlGaN Light Emitting Diodes
• Graphene Tunneling Transit-Time Terahertz Oscillator Based on Electrically Induced p-i-n Junction
• Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes : Semiconductors
• Large Chip High Power Deep Ultraviolet Light-Emitting Diodes
• 247 nm Ultra-Violet Light Emitting Diodes
• Resonant Terahertz Detector Utilizing Plasma Oscillations in Two-Dimensional Electron System with Lateral Schottky Junction
• AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
• AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
• AlGaN Deep-Ultraviolet Light-Emitting Diodes
• 10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes
• Low Frequency Noise in Insulated-Gate Strained-Si n-Channel Modulation Doped Field Effect Transistors
• Resonant Terahertz Photomixing in Integrated High-Electron-Mobility Transistor and Quantum-Well Infrared Photodetector Device
• Plasma Instability and Nonlinear Terahertz Oscillations in Resonant-Tunneling Structures

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